Abstract The resistive switching properties in amorphous Pr0.67Sr0.33MnO3 films deposited by pulsed laser deposition are investigated. Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr0.67Sr0.33MnO3/F:SnO2 junctions are obtained at room temperature. Dramatically, the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range. The results allocated those two switching types to areas of different defect densities beneath the same electrode. The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role. An interface-effect-related resistance switching is proposed in an amorphous Pr0.67Sr0.33MnO3-based memory cell.
(Conductivity phenomena in semiconductors and insulators)
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976016), the Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTUHN), China (Grant No. 2012IRTSTHN004), and the Foundation Co-established by the Province and the Ministry in Henan University, China (Grant No. SBGJ090503).
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
