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Chin. Phys. B, 2012, Vol. 21(7): 077402    DOI: 10.1088/1674-1056/21/7/077402

Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structure

Tao Ye-Liao(陶也了)a), Zuo Yu-Hua(左玉华)a)†, Zheng Jun(郑军)a), Xue Chun-Lai(薛春来)a), Cheng Bu-Wen(成步文)a), Wang Qi-Ming(王启明)a), and Xu Jun(徐骏)b)
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b School of Electrical Science and Technology, Nanjing University, Nanjing 210093, China
Abstract  A Raman frequency upshift of nc-Si phonon mode is observed at room temperature, which is attributed to a strong compressive stress in Si nanocrystals. The 10-period amorphous-Si(3 nm)/amorphous-SiO2 (3 nm) layers are deposited by high vacuum radio-frequency magnetron sputtering on quartz and sapphire substrates at different temperatures. The samples are then annealed in N2 atmosphere at 1100 ℃ for 1 h for Si crystallization. It is demonstrated that the presence of a supporting substrate at the high grown temperature can induce different types of stresses in the Si nanocrystal layers. The strain is attributed to the difference in thermal expansion coefficient between the substrate and the Si/SiO2 SL film. Such a substrate-induced stress indicates a new method to tune the optical and the electronic properties of Si nanocrystals for strained engineering.
Keywords:  stress      Raman spectrum      silicon nanocrystal      sputtering  
Received:  22 November 2011      Revised:  13 December 2011      Accepted manuscript online: 
PACS:  74.25.nd (Raman and optical spectroscopy)  
  61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61021003, 61036001, and 51072194) and the Foundation of Chinese Academy of Sciences.
Corresponding Authors:  Zuo Yu-Hua     E-mail:

Cite this article: 

Tao Ye-Liao(陶也了), Zuo Yu-Hua(左玉华), Zheng Jun(郑军), Xue Chun-Lai(薛春来), Cheng Bu-Wen(成步文), Wang Qi-Ming(王启明), and Xu Jun(徐骏) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structure 2012 Chin. Phys. B 21 077402

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