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Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition |
Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文)†, Xue Chun-Lai(薛春来), Su Shao-Jian(苏少坚), and Wang Qi-Ming(王启明) |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract The Si epitaxial films are grown on Si (100) substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature Tg are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with Tg increasing from 650 ℃ to 700 ℃. Rippled surface morphologies are observed at Tg = 700 ℃, 730 ℃, and 800 ℃, but disappear when Tg = 750 ℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.
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Received: 17 February 2011
Revised: 20 June 2011
Accepted manuscript online:
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PACS:
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68.55.-a
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(Thin film structure and morphology)
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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Fund: Project supported by the Major State Basic Research Program of China (Grant No. 2007CB613404), the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415), the National Natural Science Foundation of China (Grant Nos. 60676005, 61036003, and 60906035), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01). |
Cite this article:
Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文), Xue Chun-Lai(薛春来), Su Shao-Jian(苏少坚), and Wang Qi-Ming(王启明) Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition 2011 Chin. Phys. B 20 126801
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