Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution

doi:10.1088/1674-1056/20/10/108103

Abstract This paper describes a new method to create nanoscale SiO₂ pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO₂ channels can be prepared. The nanoscale SiO₂ patterns can also be created on the surface of three-dimensional (3D) SiO₂ substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO₂ has been qualitatively analysed using defects in SWNTs, combined with H₃O⁺ electric double layers around SWNTs in an HF solution.

Keywords: carbon nanotube silicon dioxide HF wet etching defects and electric double layers

Received: 11 May 2011
Revised: 09 June 2011
Accepted manuscript online:

PACS:	81.16.Rf	(Micro- and nanoscale pattern formation)
	82.45.Jn	(Surface structure, reactivity and catalysis)
	81.65.Cf	(Surface cleaning, etching, patterning)
	82.37.Gk	(STM and AFM manipulations of a single molecule)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010) and the National Basic Research Program of China (Grant No. 2007CB936800).

Cite this article:

Zhao Hua-Bo(赵华波), Ying Alex Yi-Qun(应轶群), Yan Feng(严峰), Wei Qin-Qin(魏芹芹), Fu Yun-Yi(傅云义), Zhang Yan(张岩), Li Yan(李彦), Wei Zi-Jun(魏子钧), and Zhang Zhao-Hui(张朝晖) Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution 2011 Chin. Phys. B 20 108103

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Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution

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