Abstract La/Mn co-doped Bi4Ti3O12 ceramics, Bi3.25La0.75Ti3-xMnxO12 (x = 0.02, 0.04, 0.06, 0.08), were prepared by the solid-state reaction method. The influence of manganese substitution for the titanium part in Bi3.25La0.75Ti3O12 on the sintering behaviour, microstructure, Raman spectra and electrical properties was investigated. The experimental results show that the phase composition of all samples with and without manganese doping, sintered at 1000 °C, consists of a single phase with a bismuth-layered structure belonging to the crystalline phase Bi4Ti3O12. There is no evidence of any impurity phase, but a small change in crystallographic orientation is observed. The Curie temperature of Bi3.25La0.75Ti3-xMnxO12 ceramics is steadily shifted to lower temperature with increasing Mn-doping content. Moreover, the remnant polarisation (Pr) of Bi3.25La0.75Ti3-xMnxO12 samples increases with Mn-doping content, and the Bi3.25La0.75Ti2.92Mn0.08O12 sample exhibits the largest Pr of 16.6 μC/cm2.
Fund: Project supported by the National
Science Fund for Distinguished Young Scholars (Grant No.~50625204),
National Natural Science Fund for Creative Research Groups (Grant
No.~50621201), and by the Ministry of Science and Technology of
China through National Basic Research Program of China (Grant No.~
2009CB623301) and through National High Technology Research and
Development Program of China (Grant No.~2006AA03Z428).
Cite this article:
Wu Yun-Yi(吴云翼), Wang Xiao-Hui(王晓慧), and Li Long-Tu(李龙土) Ferroelectric and dielectric properties of La/Mn co-doped Bi4Ti3O12 ceramics 2010 Chin. Phys. B 19 037701
[1]
Scott J F 1999 Jpn. J. Appl. Phys. 38 2272
[2]
Zhu Z Y, Wang B, Wang H, Zheng Y and Li Q K 2007Chin. Phys. 16 1780
[3]
Paz de Araujo C A, Cuchlaro J D, McMillan L D, Scott M C andScott J F 1995 Nature 374 627
[4]
Scott J F 2000 Ferroelectric Memories (Berlin: SpringerPress) p46
[5]
Li J J, Yu J, Li J, Yang W M, Wu Y Y and Wang Y B 2009 ActaPhys. Sin. 58 1246 (in Chinese)
[6]
Scott J F and Paz de Araujo C A 1989 Science 246 1400
[7]
Kato K, Zheng C, Finder J M, Dey S K and Torii Y 1998 J. Am. Ceram. Soc. 81 1869
[8]
Guo D Y, Wang Y B, Yu J, Gao J X and Li M Y 2006 ActaPhys. Sin. 55 5551 (in Chinese)
[9]
Tan C B, Zhong X L, Wang J B, Liao M, Zhou Y C and Pan W 2007Acta Phys. Sin. 56 6084 (in Chinese)
[10]
Park P H, Kang B B, Bu S D, Noh T W, Lee J and Jo W 1999 Nature 401 682
[11]
Noguchi Y and Miyayama M 2001 Appl. Phys. Lett. 78 1903
[12]
Kim J K, Kim J, Song T K and Kim S S 2002 Thin Solid Films 419 225
[13]
Sakai T, Watanabe T, Osada M, Kakihana M, Noguchi Y, Miyayama Mand Funakubo H 2003 Jpn. J. Appl. Phys. 42 2850
[14]
Wang X S and Ishiwara H 2003 Appl. Phys. Lett. 82 2479
[15]
Zhang S T, Chen Y F, Wang J, Cheng G X, Liu Z G and Min N B 2004 Appl. Phys. Lett. 84 3660
[16]
Watanabe T, Funakubo H, Osada M, Noguchi Y and Miyayama M 2002 Appl. Phys. Lett. 80 100
[17]
Li W, Yin Y, Su D and Zhu J S 2005 J. Appl. Phys. 97 084102
[18]
Zhang Q and Whatmore R W 2003 J. Appl. Phys. 94 5228
[19]
Jain M, Majumder S B, Katiyar R S, Miranda F A and van Keuls FW 2003 Appl. Phys. Lett. 82 1911
[20]
Yuan Z, Lin Y, Weaver J, Chen X, Chen C L, Subramanyam G, Jiang J C and Meletis E I 2005 Appl. Phys. Lett. 87 152901
[21]
Zhong X L, Wang J B, Sun L Z, Tan C B, Zheng X J and Zhou Y C2007 Appl. Phys. Lett. 90 012906
[22]
Kim J P, Hwang J Y, Cho C R, Ryu M K, Jang M S and Jeong S Y2004 Jpn. J. Appl. Phys. 43 6590-3
[23]
Tomar M S, Melgarelo R E, Hidalgo A, Mazumder S B and Katiyar RS 2003 Appl. Phys. Lett. 83 341
[24]
Kojima S, Imaizumi R, Hamazake S and Takashige M 1994 Jpn.J. Appl. Phys. 33 5559
[25]
Idink H, Srikanth V, White W B and Subbarao E C 1994 J. Appl. Phys. 76 1819
[26]
Sugita N, Tokuitsu E, Osada M and Kakihana M 2003 Jpn. J. Appl. Phys. Part 2 42 L944
[27]
Liu H L, Yoon S, Cooper S L, Cheng S W, Han P D and Payne D A 1998 Phys. Rev. B 58 10115
[28]
Xu T X, Shen J Y, Bo Z M, Fangand C X and Qu Y F 1993 Electron Ceramic Materials (Tianjin: Tianjin University Press)p148
[29]
Shimakawa Y, Kubo Y, Nakagawa Y, Goto S, Kamiyama T, Asano Hand Izumi F 2000 Phys. Rev. B 61 6559
[30]
Singh N K, Choudhary R N P and Panigrahi A 2002 Mater. Lett. 57 36
[31]
Kan Y M, Jin X H, Zhang G J, Wang P L, Cheng Y B and Yan D S 2004 J. Mater. Chem. 14 3566
[32]
Jiang Q Y, Subbarao E C and Cross L E 1994 J. Appl. Phys. 75 7433
[33]
Singh S K and Ishiwara H 2006 Solid State Commun. 140 430
[34]
Wang X S and Ishiwara H 2002 Appl. Phys. Lett. 82 2479
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