Influence of Ga+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves

doi:10.1088/1674-1056/19/3/037505

Abstract Ga⁺ ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance (MR) are investigated. The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose. The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6×10¹³ ions/cm² and the step disappears afterwards. Two peaks in the R--H curve are found to be asymmetric.

Keywords: ion irradiation magnetisation reversal magnetoresistance exchange bias

Received: 30 June 2009
Revised: 11 October 2009
Accepted manuscript online:

PACS:	75.70.Cn	(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
	85.70.Kh	(Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.)
	61.80.Jh	(Ion radiation effects)
	75.60.Jk	(Magnetization reversal mechanisms)
	72.15.Gd	(Galvanomagnetic and other magnetotransport effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant No.~50671048).

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Qi Xian-Jin(祁先进), Wang Yin-Gang (王寅岗), Miao Xue-Fei(缪雪飞), Li Zi-Quan(李子全), and Huang Yi-Zhong(黄一中) Influence of Ga⁺ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves 2010 Chin. Phys. B 19 037505

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Influence of Ga+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves

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Influence of Ga⁺ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves