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Chin. Phys. B, 2010, Vol. 19(2): 027102    DOI: 10.1088/1674-1056/19/2/027102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influencing range of vacancy defects in zigzag single-walled carbon nanotubes

Luo Yu-Pin(罗煜聘)a), Tien Li-Gan(田力耕)b), Lee Ming-Hsien(李明宪)c), and Li Feng-Yin(李丰颖) d)†
a Department of Electronic Engineering, National Formosa University, Yunlin County, Taiwan 632, China; b Department of Engineering and System Science, National Tsing Hua University, Hsin Chu, Taiwan 300, China; c Department of Physics, Tamkang University, Tamsui, Taipei County, Taiwan 251, China; d Department of Chemistry, National Chung Hsing University, Taichung, Taiwan 420, China
Abstract  The influencing range of a vacancy defect in a zigzag single-walled nanotube is characterized with both structural deformation and variation in bandstructure. This paper proposes a microscopic explanation to relate the structural deformation to the bandstructure variation. With an increasing defect density, the nanotubes become oblate and the energy gap between the deep localized gap state and the conducting band minimum state decreases. Theoretical results shed some light on the local energy gap engineering via vacancy density for future potential applications.
Keywords:  single-walled carbon nanotube      vacancy defect  
Received:  16 October 2008      Revised:  26 May 2009      Accepted manuscript online: 
PACS:  61.46.Fg (Nanotubes)  
  73.22.-f (Electronic structure of nanoscale materials and related systems)  
  71.55.Ht (Other nonmetals)  
  61.72.J- (Point defects and defect clusters)  

Cite this article: 

Luo Yu-Pin(罗煜聘), Tien Li-Gan(田力耕), Lee Ming-Hsien(李明宪), and Li Feng-Yin(李丰颖) Influencing range of vacancy defects in zigzag single-walled carbon nanotubes 2010 Chin. Phys. B 19 027102

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