Investigation of the lateral spread of erbium ions implanted in silicon crystal

doi:10.1088/1674-1056/19/11/113403

Abstract The erbium ions at energy of 400 keV and dose of 5×10¹⁵ ions/cm² were implanted into silicon single crystals at room temperature at the angles of 0°, 45°and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM'98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes.

Keywords: erbium ion implantation silicon Rutherford backscattering technique lateral spread

Received: 19 January 2010
Revised: 30 March 2010
Accepted manuscript online:

PACS:

61.72.uf

(Ge and Si)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10975094 and 10735070), the National Basic Research Program of China (Grant No. 2010CB832906), Program for New Century Excellent Talents in University, Ministry of Education of China (Grant No. NCET-07-0516) and the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 10422-2007B1).

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Qin Xi-Feng(秦希峰), Chen Ming(陈明), Wang Xue-Lin(王雪林), Liang Yi(梁毅), and Zhang Shao-Mei(张少梅) Investigation of the lateral spread of erbium ions implanted in silicon crystal 2010 Chin. Phys. B 19 113403

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Investigation of the lateral spread of erbium ions implanted in silicon crystal

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