Kinetic Monte Carlo simulations of three-dimensional self-assembled quantum dot islands

doi:10.1088/1674-1056/23/1/016802

Abstract By three-dimensional kinetic Monte Carlo simulations, the effects of the temperature, the flux rate, the total coverage and the interruption time on the distribution and the number of self-assembled InAs/GaAs (001) quantum dot (QD) islands are studied, which shows that a higher temperature, a lower flux rate and a longer growth time correspond to a better island distribution. The relations between the number of islands and the temperature and the flux rate are also successfully simulated. It is observed that for the total coverage lower than 0.5 ML, the number of islands decreases with the temperature increasing and other growth parameters fixed and the number of islands increases with the flux rate increasing when the deposition is lower than 0.6 ML and the other parameters are fixed.

Keywords: Monte Carlo simulations self-assembled quantum dot islands growth parameters

Received: 07 April 2013
Revised: 25 June 2013
Accepted manuscript online:

PACS:	68.55.ag	(Semiconductors)
	81.10.Aj	(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	81.16.Dn	(Self-assembly)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, and 10979065), the Fundamental Research Funds for the Central Universities, China (Grant No. 2011RC0402), and the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0261).

Corresponding Authors: Song Xin
E-mail: microliuyumin@hotmail.com

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Song Xin (宋鑫), Feng Hao (冯昊), Liu Yu-Min (刘玉敏), Yu Zhong-Yuan (俞重远), Yin Hao-Zhi (尹昊智) Kinetic Monte Carlo simulations of three-dimensional self-assembled quantum dot islands 2014 Chin. Phys. B 23 016802

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