Abstract This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 ℃ is needed to optically activate Er3+, which may be the main obstacle to impede the application of Er-doped silicon nitride.
Received: 15 December 2008
Revised: 07 January 2009
Accepted manuscript online:
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
Fund: Project supported by
the National Natural Science Foundation of China (Grant No 60336010)
and the Major State Basic Research Program of China (Grant Nos
2006CB302802 and 2007CB613404).
Cite this article:
Ding Wu-Chang(丁武昌), Liu Yan(刘艳), Zhang Yun(张云), Guo Jian-Chuan(郭剑川), Zuo Yu-Hua(左玉华), Cheng Bu-Wen(成步文), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明) A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions 2009 Chin. Phys. B 18 3044
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