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Chin. Phys. B, 2009, Vol. 18(3): 1266-1269    DOI: 10.1088/1674-1056/18/3/071
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effect of growth temperature on morphology, structure and luminescence of Tb-doped BN thin films

Liu Quan-Lin(刘泉林)a)b), Yu Guang-Hua(于广华)a), and Jiang Yong (姜勇)a)
a State Key Laboratory for Advanced Metals and Materials, School of Materials Science & Engineering, University of Science and Technology Beijing, Beijing 100083, China; b Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Abstract  This paper investigates the effect of growth temperature on morphology, structure and photoluminescence (PL) of Tb-doped boron nitride (BN) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL by scanning electron microscopy, transmission electron microscopy and PL. The characteristic emission lines of the Tb3+ were observed in the PL spectra at room temperature. The 473-K-grown film is mainly consisted of amorphous BN particles. With the growth temperature increasing up to 1273 K, the amount of amorphous BN decreases, while the amount of turbostratic BN increases. Correspondingly, the PL intensities from the Tb3+ ions increase with the increase of temperature in the range of 473--1273 K.
Keywords:  boron nitride      rare earth doped      photoluminescence      thin film growth  
Received:  25 July 2008      Revised:  18 August 2008      Accepted manuscript online: 
PACS:  81.15.Cd (Deposition by sputtering)  
  78.55.Cr (III-V semiconductors)  
  78.66.Fd (III-V semiconductors)  
  68.55.-a (Thin film structure and morphology)  
  61.43.Dq (Amorphous semiconductors, metals, and alloys)  
  68.55.A- (Nucleation and growth)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50672007), the NCET-06-0082, and the MOST 973 Program of China (Grant No 2007CB936202).

Cite this article: 

Liu Quan-Lin(刘泉林), Yu Guang-Hua(于广华), and Jiang Yong (姜勇) Effect of growth temperature on morphology, structure and luminescence of Tb-doped BN thin films 2009 Chin. Phys. B 18 1266

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