Solution-based metal induced crystallization of a-Si
Wu Chun-Ya(吴春亚)a)b)c), Li Xue-Dong(李学冬)a)b)c), Zhao Shu-Yun(赵淑云)a)b)c), Li Juan(李娟)a)b)c), Meng Zhi-Guo(孟志国)a)b)c), Xiong Shao-Zhen(熊绍珍)a)b)c), and Zhang Fang(张芳)d)
a Institute of Photo-Electronics, Nankai University, Tianjin 300071, China; b The Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology, Tianjin 300071, China; c Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), the Ministry of Education, Tianjin 300071, China; d National High Technology Research and Development Center, the Ministry of Science and Technology, Beijing 100044, China
Abstract This paper investigates a simplified metal induced crystallization (MIC) of a-Si, named solution-based MIC (S-MIC). The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol. a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6cm2/(V$\cdot$s). By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.
Received: 27 June 2008
Revised: 05 September 2008
Accepted manuscript online:
Fund: Project supported by Key Project of
National Natural Science Foundation of China (Grant No 60437030),
``863'' Project of National Ministry of Science and Technology of
China (Grant No 2004AA33570), and Tianjin Natural Science Foundation
of China (Grant No
Cite this article:
Wu Chun-Ya(吴春亚), Li Xue-Dong(李学冬), Zhao Shu-Yun(赵淑云), Li Juan(李娟), Meng Zhi-Guo(孟志国), Xiong Shao-Zhen(熊绍珍), and Zhang Fang(张芳) Solution-based metal induced crystallization of a-Si 2009 Chin. Phys. B 18 1237
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