The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors
Li Juan (李娟)a, Wu Chun-Ya (吴春亚)a, Liu Jian-Ping (刘建平)a, Zhao Shu-Yun (赵淑芸)a, Meng Zhi-Guo (孟志国)a, Xiong Shao-Zhen (熊绍珍)a, Zhang Li-Zhu (张丽珠)b
a Institute of Photo-electronics, Nankai University, Tianjin 300071, China and The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education, Tianjin 300071, China; b Tianjin Engineering Teachers College, Tianjin 300222, China
AbstractThis paper found that the crystalline volume ratio (Xc) of $\mu$c-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2%), the Xc of $\mu$c-Si deposited on SiNx is more than 64%, but just 44% if deposited on Conning 7059. It considered that the `hills' on SiNx substrate would promote the crystalline growth of $\mu$c-Si thin film, which has been confirmed by atomic force microscope (AFM) observation. Comparing several thin film transistor (TFT) samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the $\mu$c-Si thin film used in TFT as active layer should be more than 2%, and Xc should be around 50%. Additionally, the stability comparison of $\mu$c-Si TFT and a-Si TFT is shown in this paper.
Received: 29 September 2005
Revised: 24 January 2006
Accepted manuscript online:
Fund: Project supported by the `863' Project
of National Ministry of Science and Technology (Grant No 2004AA33570),
Key Project of\linebreak
\makebox[1.6mm]{}NSFC (Grant No 60437030) and Tianjin Natural Science
Foundation (Grant No 05YFJMJC01400).
Cite this article:
Li Juan (李娟), Wu Chun-Ya (吴春亚), Liu Jian-Ping (刘建平), Zhao Shu-Yun (赵淑芸), Meng Zhi-Guo (孟志国), Xiong Shao-Zhen (熊绍珍), Zhang Li-Zhu (张丽珠) The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors 2006 Chinese Physics 15 1330
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