Comparative studies on Zn0.95Co0.05O thin films on C- and R-sapphire substrates
Peng Ying-Zi(彭英姿)a)b)c)†,Thomas Liew a)b),Song Wen-Donga), and Chong Tow Chong a)b)
a Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608; b Electrical and Computer Engineering Department, National University of Singapore, Singapore 119260; c School of Science, Hangzhou Dianzi University, Hangzhou 310018, China
Abstract Zn0.95Co0.05O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method. The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (11$\bar{2}$0) sapphire substrate. Based on the results of high-resolution transmission electron microscopy and x-ray diffraction, C-plane films show larger lattice mismatch. The films exhibit magnetic and semiconductor properties at room temperature. The coercivity of the film is about 8000 A/m at room temperature. They are soft magnetic materials with small remanent squareness S for both crystal orientations. There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure.
Received: 14 May 2007
Revised: 25 June 2009
Accepted manuscript online:
Peng Ying-Zi(彭英姿),Thomas Liew,Song Wen-Dong, and Chong Tow Chong Comparative studies on Zn0.95Co0.05O thin films on C- and R-sapphire substrates 2009 Chin. Phys. B 18 5501
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