Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs
Lü Hong-Liang(吕红亮)a), Zhang Yi-Men(张义门)a), Zhang Yu-Ming(张玉明)a), and Che Yong(车勇)b)
aMicroelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi'an 710071, China; bEngineering College of Armed Police Force, Xi'an 710086, China
Abstract A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region $I-V$ model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physical-based simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.
Received: 24 June 2007
Revised: 05 November 2007
Accepted manuscript online:
PACS:
72.20.Fr
(Low-field transport and mobility; piezoresistance)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60606022) the State
Key Development Program for Basic Research of China (Grant No
51327010101) and Xi'an Applied Materials
Innovation Fund, China (Grant No XA-AM-200702).
Cite this article:
Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), and Che Yong(车勇) Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs 2008 Chin. Phys. B 17 1410
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