Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs
Meng Zhi-Guo(孟志国)a), Li Yang(李阳)a), Wu Chun-Ya(吴春亚)a), Zhao Shu-Yun(赵淑芸)a), Li Juan(李娟)a), Man Wong(王文)b), Hoi Sing-Kwok(郭海诚)b), and Xiong Shao-Zhen(熊绍珍)a)
aInstitute of Photo-electronics of Nankai University, Tianjin key laboratory for Photo-electronic thin film devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Tianjin 300071, China; bDepartment of electronic and computer engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
Abstract A dynamic phosphor-silicate glass (PSG) gettering method is proposed in which the processes of the gettering of Ni by PSG and the crystallizing of $\alpha$-Si into poly-Si by Ni take place simultaneously. The effects of PSG gettering process on the performances of solution-based metal induced crystallized (S-MIC) poly-Si materials and their thin film transistors (TFTs) are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSG during crystallization at the same time. The boundary between two neighbouring grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSG gettering, the TFTs made with PSG gettering has a reduced gate induced leakage current.
Received: 22 May 2007
Revised: 15 October 2007
Accepted manuscript online:
Fund: Project
supported by the National High Technology Research and Developments
Program of China (Grant No 004AA33570), Key Project of National
Natural Science Foundation of China (NSFC) (Grant No 60437030) and
Tianjin Natural Science Foundation (Grant No 05Y
Cite this article:
Meng Zhi-Guo(孟志国), Li Yang(李阳), Wu Chun-Ya(吴春亚), Zhao Shu-Yun(赵淑芸), Li Juan(李娟), Man Wong(王文), Hoi Sing-Kwok(郭海诚), and Xiong Shao-Zhen(熊绍珍) Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs 2008 Chin. Phys. B 17 1415
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