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Chinese Physics, 2006, Vol. 15(3): 600-603    DOI: 10.1088/1009-1963/15/3/026
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES Prev   Next  

Effect of longitudinal applied magnetic field on the self-pinched critical current in intense electron beam diode

Liu Guo-Zhi (刘国治)ab, Huang Wen-Hua (黄文华)ab, Shao Hao (邵浩)b, Xiao Ren-Zhen (肖仁珍)b 
a Xi'an Jiaotong University, Xi'an 710049, China; b Northwest Institute of Nuclear Technology, Xi'an 710024, China
Abstract  The effect of applied longitudinal magnetic field on the self-pinched critical current in the intense electron beam diode is discussed. The self-pinched critical current is derived and its validity is tested by numerical simulations. The results shows that an applied longitudinal magnetic field tends to increase the self-pinched critical current. Without the effect of anode plasma, the maximal diode current approximately equals the self-pinched critical current with the longitudinal magnetic field applied; when self-pinched occurs, the diode current approaches the self-pinched critical current.
Keywords:  intense electron beam      diode      self-pinched current  
Received:  04 March 2005      Revised:  18 July 2005      Accepted manuscript online: 
PACS:  52.75.Fk (Magnetohydrodynamic generators and thermionic convertors; plasma diodes)  
  52.58.Lq (Z-pinches, plasma focus, and other pinch devices)  
  02.60.-x (Numerical approximation and analysis)  
Fund: Project support by National High Technology 863 Program of China (Grant No AA834060).

Cite this article: 

Liu Guo-Zhi (刘国治), Huang Wen-Hua (黄文华), Shao Hao (邵浩), Xiao Ren-Zhen (肖仁珍) Effect of longitudinal applied magnetic field on the self-pinched critical current in intense electron beam diode 2006 Chinese Physics 15 600

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