Investigation of the a-Si:H films by using thermal and light-induced annealing treatment in atomic hydrogen atmosphere in H-W-ECR CVD system
Hu Yue-Hui (胡跃辉)ab, Zhu Xiu-Hong (朱秀红)a, Chen Guang-Hua (陈光华)a, Rong Yan-Dong (荣延栋)a, Li Ying (李瀛)a, Song Xue-Mei (宋雪梅)a, Zhou Huai-En (周怀恩)a, Gao Zhuo (高卓)a, Ma Zhan-Jie (马占杰)a, Deng Jin-Xiang (邓金祥)a
a Department of Material Science and Engineering, Beijing University of Technology, Beijing 100022, China; b Jingdezhen Ceramic Institute, Jingdezhen 333001, China
Abstract To Investigate the stability of hydrogenated amorphous silicon (a-Si:H) films, the thermal and light-induced annealing treatment in an atomic hydrogen atmosphere (TLAH) is carried out by using a new hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition system (H-W-ECR CVD) modified from a conventional microwave electronic cyclotron resonance chemical vapor deposition system (MWECR CVD). In order to compare with the TLAH method, the experiments of thermal annealing, and thermal and light-induced annealing are also performed. Meanwhile, for the purpose of analysing the photoconductivity degradation quantitative, the photoconductivity degradation is assumed to obey the extended exponential law: 1/$\sigma _{\rm ph}$=1/$\sigma _{\rm s}$-(1/$\sigma _{\rm s}$-1/$\sigma _{0})\exp[-(t/\tau )^{\beta }$], where the extended exponential $\beta $ and the time constant $\tau $ are gained by the slope and the intercept of the line according to the linear relationship between $\ln \left( { - \ln \left( {\dfrac{\sigma _{\rm s}^{ - 1} - \sigma _{\rm ph}^{ - 1} }{\sigma _{\rm s}^{ - 1} - \sigma _0^{ - 1} }} \right)} \right)$ and ln$t$, deduced from the extended exponential law; the photoconductivity saturation value $\sigma _{\rm s}$ can be obtained by Gaussian fitting according to the relationship between photoconductivity and light-soaking time in the logarithmic coordinate system. The experimental results show that the TLAH can improve the stability, microstructure and opto-electronic properties of the annealed a-Si:H films, obviously decrease their optical band gaps, and remarkably move their photoluminescence spectrum (PL) peaks toward low energies.
Received: 15 October 2004
Revised: 02 March 2005
Accepted manuscript online:
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No 2000028201)and the Jiangxi Province Foundation of China (Grant No 0412023).
Cite this article:
Hu Yue-Hui (胡跃辉), Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Rong Yan-Dong (荣延栋), Li Ying (李瀛), Song Xue-Mei (宋雪梅), Zhou Huai-En (周怀恩), Gao Zhuo (高卓), Ma Zhan-Jie (马占杰), Deng Jin-Xiang (邓金祥) Investigation of the a-Si:H films by using thermal and light-induced annealing treatment in atomic hydrogen atmosphere in H-W-ECR CVD system 2005 Chinese Physics 14 1457
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