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Chinese Physics, 2004, Vol. 13(8): 1330-1333    DOI: 10.1088/1009-1963/13/8/026
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Preparation of transparent conductive ZnO:Tb films and their photoluminescence properties

Fang Ze-Bo (方泽波), Tan Yong-Sheng (谭永胜), Liu Xue-Qin (刘雪芹), Yang Ying-Hu (杨映虎), Wang Yin-Yue (王印月)
School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
Abstract  

Tb-doped Zinc oxide (ZnO:Tb) films were prepared by RF reactive magnetron sputtering of a Zn target with some Tb-chips attached. The results show that the appropriate Tb ions incorporated into ZnO films can improve the structural and electrical properties of ZnO films. Photoluminescence (PL) measurements show that the characteristic emission lines correspond to the intra-4f$^n$-shell transitions in Tb$^{3+}$ ions at room temperature. Under the optimal conditions, the ZnO:Tb films were prepared with the lowest resistivity ($\rho$) of $9.34\times10^{ -4}$$\Omega$cm, transmittance over 80% at the visible region and the strong blue emission.

Keywords:  ZnO films      photoluminescence      RF reactive sputtering  
Received:  26 September 2003      Revised:  16 January 2004      Accepted manuscript online: 
PACS:  78.55.Et (II-VI semiconductors)  
  81.15.Cd (Deposition by sputtering)  
  73.50.Jt (Galvanomagnetic and other magnetotransport effects)  
  79.20.Rf (Atomic, molecular, and ion beam impact and interactions with surfaces)  
  68.55.Jk  
  78.66.Hf (II-VI semiconductors)  
  73.61.Ga (II-VI semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50272027) and the Natural Science Foundation of Gansu Province, China (Grant No ZS011-050-C).

Cite this article: 

Fang Ze-Bo (方泽波), Tan Yong-Sheng (谭永胜), Liu Xue-Qin (刘雪芹), Yang Ying-Hu (杨映虎), Wang Yin-Yue (王印月) Preparation of transparent conductive ZnO:Tb films and their photoluminescence properties 2004 Chinese Physics 13 1330

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