Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system

doi:10.1088/1009-1963/11/3/319

Abstract

Abstract Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C₆₀ in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth of diamond films on silicon wafer using C₆₀ as intermediate layer in HFCVD system is described. In order to increase the density of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is not beneficial for improving the diamond nucleation. The multi-layers of C₆₀ molecules, but not a monolayer, can increase the density of diamond nuclei in the presence of H atoms.

Keywords: diamond thin films scanning electron microscopy C₆₀

Received: 31 August 2001
Revised: 14 November 2001
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.30.Na	(Fullerenes and related materials)
	78.40.Ri	(Fullerenes and related materials)
	68.65.Ac	(Multilayers)

Fund: Project supported by the National Natural Science Foundation of China (Grant No 50072045).

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Fei Yun-Jie (费允杰), Wang Xue (王学), Wang Xue-Jin(王学进), Zhou Yu-Qing (周玉清), Xiong Yan-Yun (熊艳云), Feng Ke-An (冯克安) Nucleation of diamond on silicon wafers using C₆₀ in the hot filament chemical vapour deposition system 2002 Chinese Physics 11 298

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Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system

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Nucleation of diamond on silicon wafers using C₆₀ in the hot filament chemical vapour deposition system