A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

doi:10.1088/1674-1056/21/2/027305

Abstract C₆₀ field-effect transistor (OFET) with a mobility as high as 5.17 cm²/V·s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C₆₀ film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C₆₀ film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C₆₀ film efficiently.

Keywords: organic field-effect transistors C₆₀ Bphen passivation layer

Received: 24 July 2011
Revised: 03 November 2011
Accepted manuscript online:

PACS:	73.61.Wp	(Fullerenes and related materials)
	85.30.Tv	(Field effect devices)
	88.30.rf	(Organics)

Fund: Project supported by the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20100471667), the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) (Grant No. 2011jjA40020), the National Natural Science Foundation of China (Grant Nos. 60736005 and 61021061), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. GGRYJJ08-05).

Corresponding Authors: Zhou Jian-Lin,zjl4062002@163.com;Yu Jun-Sheng,jsyu@uestc.edu.cn
E-mail: zjl4062002@163.com;jsyu@uestc.edu.cn

Cite this article:

Zhou Jian-Lin(周建林), Yu Jun-Sheng(于军胜), Yu Xin-Ge(于欣格), and Cai Xin-Yang(蔡欣洋) A high mobility C₆₀ field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes 2012 Chin. Phys. B 21 027305

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A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

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A high mobility C₆₀ field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes