|
|
|
Characterization of a nano line width reference material based on metrological scanning electron microscope |
| Fang Wang(王芳)1, Yushu Shi(施玉书)1,†, Wei Li(李伟)1, Xiao Deng(邓晓)2, Xinbin Cheng(程鑫彬)2, Shu Zhang(张树)1, and Xixi Yu(余茜茜)1,3 |
1 National Institute of Metrology, Beijing 100029, China;
2 Tongji University, Shanghai 200092, China;
3 Shenzhen Institute Technology Innovation, National Institute of Metrology, Shenzhen 518038, China |
|
|
|
|
Abstract The line width (often synonymously used for critical dimension, CD) is a crucial parameter in integrated circuits. To accurately control CD values in manufacturing, a reasonable CD reference material is required to calibrate the corresponding instruments. We develop a new reference material with nominal CDs of 160 nm, 80 nm, and 40 nm. The line features are investigated based on the metrological scanning electron microscope which is developed by the National Institute of Metrology (NIM) in China. Also, we propose a new characterization method for the precise measurement of CD values. After filtering and leveling the intensity profiles, the line features are characterized by the combination model of the Gaussian and Lorentz functions. The left and right edges of CD are automatically extracted with the profile decomposition and k-means algorithm. Then the width of the two edges at the half intensity position is regarded as the standard CD value. Finally, the measurement results are evaluated in terms of the sample, instrument, algorithm, and repeatability. The experiments indicate efficiency of the proposed method which can be easily applied in practice to accurately characterize CDs.
|
Received: 19 August 2021
Revised: 12 October 2021
Accepted manuscript online:
|
|
PACS:
|
06.20.-f
|
(Metrology)
|
| |
06.20.fb
|
(Standards and calibration)
|
| |
68.37.Hk
|
(Scanning electron microscopy (SEM) (including EBIC))
|
|
| Fund: This work was supported by the National Key Research and Development Program of China (Grant No.2020YFF0218403) and the Basic Scientific Research Operating Fund of NIM (Grant No.AKYZD2007-1). |
Corresponding Authors:
Yushu Shi,E-mail:shiys@nim.ac.cn
E-mail: shiys@nim.ac.cn
|
| About author: 2021-10-22 |
Cite this article:
Fang Wang(王芳), Yushu Shi(施玉书), Wei Li(李伟), Xiao Deng(邓晓), Xinbin Cheng(程鑫彬), Shu Zhang(张树), and Xixi Yu(余茜茜) Characterization of a nano line width reference material based on metrological scanning electron microscope 2022 Chin. Phys. B 31 050601
|
[1] Wu Z R, Cai Y N, Wang X R, Zhang L F, Deng X, Cheng X B and Li T B 2019 Chin. Phys. B 28 030601
[2] Hoefflinger B 2011 Chips 2020 (Heidelberg: Springer) pp. 161-174
[3] Habibullah H 2020 Measurement 159 107776
[4] Shi Y S, Li W, Gao S T, Lu M Z and Hu X D 2018 Ultramicroscopy 190 77
[5] Dai G L, Häßler-Grohne W, Hüser D, Wolff H, Danzebrink H, Koenders L and Bosse H 2011 Meas. Sci. Technol. 22 094009
[6] Villarrubia J S 1997 J. Res. Natl. Inst. Stand. 102 425
[7] Dahlen G, Osborn M, Okulan N, Foreman W, Chand A and Foucher J 2005 J. Vac. Sci. Technol. B 23 2297
[8] Dai G L, Hahm K, Scholze F, Henn M, Gross H, Fluegge J and Bosse H 2014 Meas. Sci. Technol. 25 044002
[9] Dai G L, Zhu F, Heidelmann M, Fritz G, Thomas B, Kalt S and Fluegge J 2015 Meas. Sci. Technol. 26 115006
[10] BIPM 2019 The International System of Units (SI Brochure) 9th edn. pp. 7-9
[11] Dai G L, Hahm K, Bosseand H and Dixson R G 2017 Meas. Sci. Technol. 28 065010
[12] Dai G L, Heidelmann M, Kübel C, Prang R, Fluegge J and Bosse H 2013 Meas. Sci. Technol. 24 085001
[13] Li Y G, Zhang P and Ding Z J 2013 Scanning 35 127
[14] Zhang P, Mao S F and Ding Z J 2015 Eur. Phys. J. Appl. Phys. 69 30703
[15] Zou Y B, Khan M S S, Li H M, Li Y G, Li W, Gao S T, Liu L S and Ding Z J 2018 Measurement 123 150
[16] ISO/DIS 2019 Microbeam analysis—Scanning electron microscopy-Method for evaluating critical dimensions by CD-SEM (Technical Committee: ISO/TC 202/SC 4 Scanning electron microscopy) ISO 21466:2019
[17] Ding Z J and Li H M 2005 Surf. Interface Anal. 37 912
[18] Zhang P, Wang H Y, Li Y G, Mao S F and Ding Z J 2011 Scanning 34 145
[19] Li Y G, Mao S F, Li H M, Xiao S M and Ding Z J 2008 J. Appl. Phys. 104 064901
[20] Cai Y N, Deng X, Wang X P and Yang F 2020 International Conference on Optoelectronic and Microelectronic Technology and Application, Nanjing, China, p. 116172Q
[21] ISO/IEC 2008 Uncertainty of measurement—Part 3: Guide to the expression of uncertainty in measurement (GUM:1995) (Technical Committee: ISO/TMBG Technical Management Board) ISO/IEC GUIDE 98-3:2008 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
