Properties of C60 thin film transistor based on polystyrene
Zhou Jian-Lin (周建林)a, Niu Qiao-Li (牛巧利)b
a Department of Electronic Engineering, College of Communication and Electronics, Chongqing University, Chongqing 400044, China; b Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Abstract This paper reports that the n-type organic thin-film transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/(V·s) could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible 'hysteresis effect' contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.
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