Properties of C60 thin film transistor based on polystyrene

doi:10.1088/1674-1056/19/7/077305

Abstract This paper reports that the n-type organic thin-film transistors have been fabricated by using C₆₀ as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C₆₀ film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm²/(V·s) could reach when Barium was introduced as electrodes. Moreover, the C₆₀ transistor shows a negligible 'hysteresis effect' contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.

Keywords: organic thin film transistors n-type C₆₀ polystyrene

Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.65.+h	(Molecular electronic devices)
	61.41.+e	(Polymers, elastomers, and plastics)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60676033).

Cite this article:

Zhou Jian-Lin (周建林), Niu Qiao-Li (牛巧利) Properties of C₆₀ thin film transistor based on polystyrene 2010 Chin. Phys. B 19 077305

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Properties of C₆₀ thin film transistor based on polystyrene