a Department of Electronics, Peking University, Beijing 100871, China; b Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026, China
Abstract In the early stage of thin film preparation from vapor, growth patterns consisting of stable clusters will gradually cover almost the entire substrate surface. During this process, the density of single atoms is zero on growth patterns and the nucleation of clusters will proceed in the substrate parts uncovered by these patterns. The influence of growth pattern coverage on the nucleation of thin films has not been considered wholly in the classical theory of thin films. We will systematically study the influence of growth pattern coverage and give some correction formulas for the widely used classical theory of thin films. It was found that the classical nucleation rate is proportional to the square of the uncovered area. The corrected formulas are of particular importance in the dominant coverage case.
Received: 14 March 2001
Accepted manuscript online:
Fund: Project supported by the National Advanced Material Committee of China (Grant No. 863-715-002-003) and the National Natural Science Foundation of China (Grant No. 69890221).
Cite this article:
Shao Qing-yi (邵庆益), Zhang Qi-feng (张琦锋), Fang Rong-chuan (方容川), Zhu Kai-gui (朱开贵), Xu Bei-xue (许北雪), Liu Wei-min (刘惟敏), Zhao Xing-yu (赵兴钰), Wu Jin-lei (吴锦雷), Xue Zeng-quan (薛增泉) CLUSTER NUCLEATION LIMITED BY GROWTH PATTERN COVERAGE IN THIN FILM PREPARATION FROM VAPOR 2001 Chinese Physics 10 140
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