INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING
Gao Fei (高斐)ac, Huang Chang-jun (黄昌俊)b, Huang Da-ding (黄大定)c, Li Jian-ping (李建平)c, Kong Mei-ying (孔梅影)c, Zeng Yi-ping (曾一平)c, Li Jin-min (李晋闽)c, Lin Lan-ying (林兰英)c
a Department of Physics, Shaanxi Normal University, Xi'an 710062, China; b State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.
Received: 15 March 2001
Revised: 31 May 2001
Accepted manuscript online:
Fund: Project supported by the Key Program in the National "Ninth Five-Year" Plan, China (Grant No. 97-763-02-02).
Cite this article:
Gao Fei (高斐), Huang Chang-jun (黄昌俊), Huang Da-ding (黄大定), Li Jian-ping (李建平), Kong Mei-ying (孔梅影), Zeng Yi-ping (曾一平), Li Jin-min (李晋闽), Lin Lan-ying (林兰英) INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING 2001 Chinese Physics 10 966
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