LATTICE DYNAMICS OF WURTZITE SEMICONDUCTORS GaN AND AlN

doi:10.1088/1004-423X/7/11/006

Abstract

Abstract The lattice dynamics of wurtzite GaN and AlN is studied within the framework of a rigid-ion model. Short-range interactions up to the third nearest neighbors are described by using a valence-force-field potential and the long-range Coulomb interactions between ions are calculated via an Ewald summation. Phonon dispersion curves, density of states and specific heats are presented.

Received: 17 December 1997
Revised: 19 June 1998
Accepted manuscript online:

PACS:	63.20.D-	(Phonon states and bands, normal modes, and phonon dispersion)
	71.20.Nr	(Semiconductor compounds)
	78.40.Fy	(Semiconductors)
	65.60.+a	(Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)
	73.20.At	(Surface states, band structure, electron density of states)

Fund: Project supported by the National Natural Science Foundation of China and by the State Commission of Science and Technology of China.

Cite this article:

Wei Guang-hong (韦广红), Zi Jian (资剑), Zhang Kai-ming (张开明), Xie Xi-de (谢希德) LATTICE DYNAMICS OF WURTZITE SEMICONDUCTORS GaN AND AlN 1998 Acta Physica Sinica (Overseas Edition) 7 841

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