Abstract Ferroelectric Pb(Zr, Ti)O3 thin films were prepared by pulsed exeimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was per-formed to crystallize the films, Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with Pr=15μC/cm2, Ec= 50kV/cm, high resistivity and high dielectric constant.
Received: 07 February 1995
Accepted manuscript online:
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