| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Infrared laser-induced fast photovoltaic effect observed in orthorhombic tin oxide film |
| Song-Qing Zhao(赵嵩卿)1,2,3,4,5, Ji-Rui Zhang(张际蕊)5, Hong-Jie Shi(施宏杰)5, Kun-Kun Yan(闫坤坤)5, Chun Huang(黄春)2, Li-Min Yang(杨立敏)1,2,3,4,5, Rui Yang(杨睿)5, Kun Zhao(赵昆)1,2,3,4,5 |
1. State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249, China;
2. Key Laboratory of Oil and Gas Terahertz Spectroscopy and Photoelectric Detection, China Petroleum and Chemical Industry Federation (CPCIF), Beijing 100723, China;
3. Key Laboratory of Optical Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, China;
4. Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, China University of Petroleum, Beijing 102249, China;
5. College of Science, China University of Petroleum (Beijing), Beijing 102249, China |
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Abstract The SnO2/SnO with an orthorhombic structure is a material known to be stable at high pressures and temperatures and expected to have new optical and electrical properties. The authors report a new finding of the infrared laser induced a fast photovoltaic effect arising from orthorhombic tin oxide film with an indirect band gap (～ 2.4 eV) which is deposited by pulsed laser deposition. The rising time of the photovoltaic signal is about 3 ns with a peak value of 4.48 mV under the pulsed laser beam with energy density 0.015 mJ/mm2. The relation between the photovoltages and laser positions along the line between two electrodes of the film is also exhibited. A possible mechanism is put forward to explain this phenomenon. All data and analyses demonstrate that the orthorhombic tin oxide with an indirect band gap could be used as a candidate for an infrared photodetector which can be operated at high pressures and temperatures.
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Received: 31 July 2015
Revised: 15 October 2015
Accepted manuscript online:
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PACS:
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72.40.+w
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(Photoconduction and photovoltaic effects)
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78.66.-w
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(Optical properties of specific thin films)
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78.68.+m
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(Optical properties of surfaces)
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81.15.Fg
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(Pulsed laser ablation deposition)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60877038). |
Corresponding Authors:
Song-Qing Zhao
E-mail: zhaosongqing@aliyun.com
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Cite this article:
Song-Qing Zhao(赵嵩卿), Ji-Rui Zhang(张际蕊), Hong-Jie Shi(施宏杰), Kun-Kun Yan(闫坤坤), Chun Huang(黄春), Li-Min Yang(杨立敏), Rui Yang(杨睿), Kun Zhao(赵昆) Infrared laser-induced fast photovoltaic effect observed in orthorhombic tin oxide film 2016 Chin. Phys. B 25 027202
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