Abstract The creation of defects in GaP bombarded with MeV 4He ions has been studied under ultra-high-vacuum condition by Rutherford backscattering/channeling (RBS/C) method, and the absolute damage cross section $\sigma$d for GaP has been determined under bombardment of 1.0 MeV 4He ions, with the measured value 8.0xl0-18 cm2. Our experimental results suggest that the defect generation rate is strongly related to the surface condition. When the GaP covered with a thin amorphous layer, a significant ion beam annealing effect will be observed. The present results show that for GaP the damage is produced mainly by nuclear collision.
(Surface states, band structure, electron density of states)
Cite this article:
LI XIANG-YANG (李向阳), CHENG HUAN-SHENG (承焕生), YANG FU-JIA (杨福家) RADIATION-INDUCED DAMAGE IN GaP BY MeV HELIUM IONS 1994 Acta Physica Sinica (Overseas Edition) 3 116
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