| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Anisotropic photogalvanic effects in monolayer WSe2 under elliptically polarized light |
| Jinyan Niu(牛金艳)1, Yonghong Ma(马永红)1, Wuming Liu(刘伍明)1,2,†, and Jia Liu(刘佳)1,‡ |
1 School of Science, Inner Mongolia University of Science and Technology, Baotou 014010, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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Abstract We investigate the photogalvanic effect in monolayer WSe$_{2}$ under elliptically polarized light using non-equilibrium Green's function density functional theory (NEGF-DFT) simulations. When defects are added that reduce the intrinsic ${D}_{3h}$ symmetry to ${C}_{s}$ and ${C}_{2v}$, the photocurrent shows distinct direction-dependent responses: a sine function of the helicity angle along the zigzag direction and a cosine function along the armchair direction. This anisotropy arises from the specific nonzero tensor elements activated by symmetry reduction. Ga substitution is identified as a highly effective strategy, enhancing the polarization sensitivity by 55.54 times compared to that of pristine WSe$_{2}$. Furthermore, we reveal a resonant enhancement mechanism via impurity states introduced by Ga doping, as confirmed by projected density of states (PDOS) analysis. The application of a small bias voltage (0.04 V) further boosts the photocurrent by up to 368 times. These findings establish a direct link between crystal symmetry, defect engineering, and photoresponse, providing a pathway for high-performance polarization-sensitive optoelectronic devices.
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Received: 09 April 2026
Revised: 08 June 2026
Accepted manuscript online: 09 June 2026
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PACS:
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73.50.Pz
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(Photoconduction and photovoltaic effects)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400900, 2021YFA0718300, 2024YFF0726700, 12174461, 12234012, 12334012, and 52327808), the National Natural Science Foundation of China (Grant Nos. 12264037 and 12265022), the Natural Science Foundation of Inner Mongolia Autonomous Region of China (Grant Nos. 2025JQ007 and 2025LHMS01006), the Program for Young Talents in Science and Technology in Universities of Inner Mongolia Autonomous Region (Grant No. NJYT25031), the Fundamental Research Funds for Inner Mongolia University of Science, Technology (Grant No. 2023RCTD015), the China Scholarship Council (Grant No. 202308150117), the Elite Revitalizing Inner Mongolia Program (Grant No. 2025TGL05), and the Space Application System of the China Manned Space Program. |
Corresponding Authors:
Wuming Liu, Jia Liu
E-mail: wmliu@iphy.ac.cn;jialiu@imust.edu.cn
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Cite this article:
Jinyan Niu(牛金艳), Yonghong Ma(马永红), Wuming Liu(刘伍明), and Jia Liu(刘佳) Anisotropic photogalvanic effects in monolayer WSe2 under elliptically polarized light 2026 Chin. Phys. B 35 077302
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