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Chin. Phys. B, 2026, Vol. 35(5): 057112    DOI: 10.1088/1674-1056/ae5782
SPECIAL TOPIC — Exciton Physics: Fundamentals, materials and devices Prev   Next  

Förster energy transfer boosts indirect anisotropic interlayer excitons in 2L-MoSe2/perovskite heterostructures

Yingying Chen(陈瑛瑛)1, Zihao Jiao(焦子豪)2, Haizhen Wang(王海珍)2, and Dehui Li(李德慧)2,3,†
1 School of Science, Jimei University, Xiamen 361021, China;
2 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
3 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract  Interlayer excitons (IXs) in two-dimensional (2D) van der Waals heterostructures have attracted considerable attention due to their unique optical and electronic properties. Owing to the spatially indirect nature, the radiative emission efficiency is highly sensitive to interlayer twist angles. Further considering that their uniformly oriented out-of-plane dipole moments limit directional emission, strategies to simultaneously improve emission efficiency and induce optical anisotropy warrant in-depth investigation. In this work, we report significant photoluminescence (PL) enhancement and optical anisotropy of IXs in 2L-MoSe$_{2}$/perovskite heterostructures mediated by energy transfer from ReS$_{2}$. We attribute this enhancement to Förster resonance energy transfer (FRET), which increases the 2L-MoSe$_{2}$ emission by approximately eight-fold at room temperature, and nearly doubles the emission intensity of momentum-indirect IXs in 2L-MoSe$_{2}$/perovskite heterostructures at 78 K. Importantly, the optical anisotropy of ReS$_{2}$ can be effectively imprinted onto 2L-MoSe$_2$ and associated indirect IXs during the energy transfer process, yielding a linear dichroism of approximately 1.1 for both intralayer excitons and IXs with identical polarization directions. These findings expand the scope of IX study beyond direct bandgap materials with strong intrinsic emission to include systems with indirect bandgaps, offering new avenues for realizing high-performance polarization-sensitive optoelectronic devices.
Keywords:  energy transfer      interlayer excitons      transition metal dichalcogenides      ReS2      optical anisotropy  
Received:  29 December 2025      Revised:  26 February 2026      Accepted manuscript online:  26 March 2026
PACS:  71.35.-y (Excitons and related phenomena)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2024YFA1208500), the Hubei Provincial Natural Science Foundation (Grant No. 2025AFA039), Open Project Program of Hubei Optical Fundamental Research Center (Grant No. HBO2026C015), the Natural Science Foundation of Fujian Province, China (Grant No. 2025J08202), and Xiamen City (Grant No. 3502Z202471047).
Corresponding Authors:  Dehui Li     E-mail:  dehuili@hust.edu.cn

Cite this article: 

Yingying Chen(陈瑛瑛), Zihao Jiao(焦子豪), Haizhen Wang(王海珍), and Dehui Li(李德慧) Förster energy transfer boosts indirect anisotropic interlayer excitons in 2L-MoSe2/perovskite heterostructures 2026 Chin. Phys. B 35 057112

[1] Aftab S, Iqbal M Z, Hegazy H H, Azam S and Kabir F 2023 Nanoscale 15 3610
[2] Gillespie S C, van der Laan M, Poonia D, Maiti S, Kinge S, Siebbeles L D A and Schall P 2024 2D Mater. 11 022005
[3] Bradac C, Xu Z Q and Aharonovich I 2021 Nano Lett. 21 1193
[4] Chernikov A, Berkelbach T C, Hill H M, Rigosi A, Li Y, Aslan O B, Reichman D R, Hybertsen M S and Heinz T F 2014 Phys. Rev. Lett. 113 076802
[5] Du W, Gong Y, Wang A, Zhang Y, Zhang Z, Jiang C, Bao X, Zeng X, Wu B, Zhao G, Fu J, Zheng Q, Zhang Q and Liu X 2026 ACS Nano 20 1732
[6] Zheng Y, Wang C, Tian Y, Wang X, Jiang C, Zhang Y, Gong Y, Zhong Y, Wang S, Yue S and Liu X 2025 Nano Lett. 25 12938
[7] Gao Y, Li Y, Liu W, Yan C, Wang Q, Xin W, Xu H and Liu Y 2025 Chin. Phys. B 34 097102
[8] Nguyen-Truong H T 2022 Phys. Rev. B 105 L201407
[9] Hansen K R, Colton J S and Whittaker-Brooks L 2023 Adv. Opt. Mater. 12 2301659
[10] Bussolotti F, Kawai H, Ooi Z E, Chellappan V, Thian D, Pang A L C and Goh K E J 2018 Nano Futures 2 032001
[11] Yao W, Yang D, Chen Y, Hu J, Li J and Li D 2022 Nano Lett. 22 7230
[12] Tan Q, Rasmita A, Li S, Liu S, Huang Z, Xiong Q, Yang S A, Novoselov K S and Gao W B 2021 Sci. Adv. 7 eabh0863
[13] Bretscher H, Li Z, Xiao J, Qiu D Y, Refaely-Abramson S, Alexander- Webber J A, Tanoh A, Fan Y, Delport G, Williams C A, Stranks S D, Hofmann S, Neaton J B, Louie S G and Rao A 2021 ACS Nano 15 8780
[14] Rhodes D, Chae S H, Ribeiro-Palau R and Hone J 2019 Nat. Mater. 18 541
[15] Chen J, Xie X, Li S, Liu Z, Wang J T, He J and Liu Y 2025 Small 21 2502479
[16] Pincelli T, Vasileiadis T, Dong S, Beaulieu S, Dendzik M, Zahn D, Lee S E, Seiler H, Qi Y, Xian R P, Maklar J, Coy E, Mueller N S, Okamura Y, Reich S, Wolf M, Rettig L and Ernstorfer R 2023 Adv. Mater. 35 2209100
[17] Qian C, Troue M, Figueiredo J, Soubelet P, Villafane V, Beierlein J, Klembt S, Stier A V, Hoefling S, Holleitner A W and Finley J J 2024 Sci. Adv. 10 eadk6359
[18] Lien D H, Uddin S Z, Yeh M, Amani M, Kim H, Ager J W, Yablonovitch E and Javey A 2019 Science 364 468
[19] Hu Z, Krisnanda T, Fieramosca A, Zhao J, Sun Q, Chen Y, Liu H, Luo Y, Su R, Wang J, Watanabe K, Taniguchi T, Eda G, Wang X R, Ghosh S, Dini K, Sanvitto D, Liew T C H and Xiong Q 2024 Nat. Commun. 15 1747
[20] Mak K F and Shan J 2022 Nat. Nanotechnol. 17 686
[21] Chuang H J, Stevens C E, Rosenberger M R, Lee S J, McCreary K M, Hendrickson J R and Jonker B T 2024 Nano Lett. 24 5529
[22] Prins F, Goodman A J and Tisdale W A 2014 Nano Lett. 14 6087
[23] Wu L, Chen Y, Zhou H and Zhu H 2019 ACS Nano 13 2341
[24] Zou Y, Zhang Z, Wang C, Cheng Y, Wang C, Sun K, Zhang W, Suo P, Lin X, Ma H, Leng Y, Liu W, Du J and Ma G 2024 ACS Appl. Mater. Interfaces 16 30589
[25] de Toledo J R, Serati de Brito C, Rosa B L T, Cadore A R, Rabahi C R, Faria Junior P E, Ferreira de Brito A C, Ghiasi T S, Ingla-Aynés J, Schuler C, van der Zant H S J, Reitzenstein S, Barcelos I D, Dirnberger F and Gobato Y G 2025 Nano Lett. 25 13212
[26] Sun Z Y, Li Y, Xu B, Chen H, Wang P, Zhao S X, Yang L, Gao B, Dou X M, Sun B Q, Zhen L and Xu C Y 2021 Adv. Opt. Mater. 9 2100438
[27] Kim J S, Maity N, Kim M, Fu S, Juneja R, Singh A, Akinwande D and Lin J F 2022 ACS Appl. Mater. Interfaces 14 46841
[28] Luo Z, Yi X, Jiang Y, Luo N, Liu B, Zhong Y, Tan Q, Jiang Q, Liu X, Chen S, Lu Y and Pan A 2024 ACS Nano 18 31215
[29] Zhao L Y, Xiao J M, Yang J Y, Song Z X, Zhang Y P, Wang Y, Wang H, Wang W X and Wang H Y 2025 Laser Photonics Rev. 19 2400928
[30] Huang Y,Wang Q, Mu M, Pan L, Song P, Drafi A A, Yang W and Li Y 2025 Adv. Opt. Mater. 13 2403055
[31] Zhang J, Zhou Q, Xie J, Zhao J, Yu J, Zhang K, Jia T, Huang F and Cao Y 2024 Adv. Funct. Mater. 34 2313722
[32] Koyaz Y, Papadopoulos S, Moilanen A J, Ziegler J D, Taniguchi T, Watanabe K, Wang L and Novotny L 2025 ACS Photonics 12 5390
[33] Chen X, Zhao H, Fei R, Huang C, Qiao J, Sun C, Zhu H, Zhan L, Hu Z, Li S, Yang L, Tang Z, Wang L, Shi Y, Ji W, Xu J B, Gao L, Gan X and Wang X 2025 Sci. Adv. 11 eadw3969
[34] Jiang Y, Chen S, Zheng W, Zheng B and Pan A 2021 Light Sci. Appl. 10 72
[35] Zhu J, Shen F, Chen Z, Liu F, Jin S, Lei D and Xu J 2024 ACS Nano 18 13599
[36] Zheng T, Zhao X, Yang F, Song J, ZhaoW, Zhao H and Ni Z 2024 ACS Photonics 11 580
[37] Zhang C, Wu K, Wu L, Cao G, Liu X, Zhang C, Wu S, Yuan X, Zhang L, Li X and Yang J 2025 Small 21 2411761
[38] Zhang X, Xie X, Li S, Chen J, He J, Liu Z, Wang J T and Liu Y 2025 Nano Res. 18 94907365
[39] Xie X, Ding J, Wu B, Zheng H, Li S, He J, Liu Z, Wang J T and Liu Y 2023 Appl. Phys. Lett. 123 222101
[40] Luo Y, Su W, Chen F, Wu K, Zeng Y and Lu H W 2023 ACS Appl. Mater. Interfaces 15 54808
[41] Jones L A H, Xing Z, Swallow J E N, Shiel H, Featherstone T J, Smiles M J, Fleck N, Thakur P K, Lee T L, Hardwick L J, Scanlon D O, Regoutz A, Veal T D and Dhanak V R 2022 J. Phys. Chem. C 126 21022
[42] Koda D S, Bechstedt F, Marques M and Teles L K 2018 Phys. Rev. B 97 165402
[43] Keyshar K, Berg M, Zhang X, Vajtai R, Gupta G, Chan C K, Beechem T E, Ajayan P M, Mohite A D and Ohta T 2017 ACS Nano 11 8223
[44] Raja A, Waldecker L, Zipfel J, Cho Y, Brem S, Ziegler J D, Kulig M, Taniguchi T, Watanabe K, Malic E, Heinz T F, Berkelbach T C and Chernikov A 2019 Nat. Nanotechnol. 14 832
[45] Tongay S, Zhou J, Ataca C, Lo K, Matthews T S, Li J, Grossman J C and Wu J 2012 Nano Lett. 12 5576
[46] Schiettecatte P, Poonia D, Tanghe I, Maiti S, Failla M, Kinge S, Hens Z, Siebbeles L D A and Geiregat P 2021 J. Phys. Chem. C 125 20993
[47] Wang H, Jiao Z, Jin C, Jiang K and Li D 2026 Small 22 e10501
[48] Karmakar A, Al-Mahboob A, Petoukhoff C E, Kravchyna O, Chan N S, Taniguchi T, Watanabe K and Dani K M 2022 ACS Nano 16 3861
[49] Yun W S, Han S W, Hong S C, Kim I G and Lee J D 2012 Phys. Rev. B 85 033305
[50] Chen Y, Liu Z, Li J, Cheng X, Ma J,Wang H and Li D 2020 ACS Nano 14 10258
[51] Yang D, Hu J, Chen Y and Li D 2023 Adv. Opt. Mater. 11 2300398
[52] Tongay S, Sahin H, Ko C, Luce A, Fan W, Liu K, Zhou J, Huang Y S, Ho C H, Yan J, Ogletree D F, Aloni S, Ji J, Li S, Li J, Peeters F M and Wu J 2014 Nat. Commun. 5 3252
[53] Che Z, Deng W, Li J, Zhao C, Wang F, Wu Y, Wang Q J, Qiu C and Zhang Y 2025 Adv. Funct. Mater. 35 2416994
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