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Epitaxial growth of quasi-one-dimensional TaNi2Se2 monolayer with anisotropic electronic and mechanical properties |
| Jiayi Wang(王嘉翌)1,2,†, Qiuchen Yu(余秋辰)1,2,†, Hui Guo(郭辉)1,2,†,‡, Peng Fan(范朋)1,2, Siyu Xu(徐思宇)1,2, Yixuan Gao(高艺璇)3,§, Hui Chen(陈辉)1,2,¶, and Hong-Jun Gao(高鸿钧)1,2 |
1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China |
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Abstract Quasi-one-dimensional (quasi-1D) van der Waals layered materials have garnered significant interest for their intrinsic in-plane anisotropy and potential applications in low-dimensional quantum devices. Here, we report the realization of a quasi-1D TaNi2Se2 monolayer with pronounced anisotropic electronic and mechanical properties. The monolayer TaNi2Se2 is synthesized on a graphite substrate via van der Waals epitaxy. Using low-temperature scanning tunneling microscopy/spectroscopy, we reveal the characteristic quasi-1D chain-like lattice structure and confirm the intrinsic metallic nature of the monolayer TaNi2Se2. Notably, the electronic states exhibit a pronounced quasi-1D modulation that follows the chain structure, indicating strong electronic anisotropy. First-principles calculations further confirm the structural stability and provide signatures of anisotropic in-plane mechanical properties, as well as possible topological edge states arising from spin–orbit coupling. Our findings establish monolayer TaNi2Se2 as a novel quasi-1D van der Waals material and provide a promising platform for exploring anisotropy-driven quantum phenomena and device applications.
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Received: 18 March 2026
Revised: 30 March 2026
Accepted manuscript online: 01 April 2026
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PACS:
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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62.20.de
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(Elastic moduli)
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| Fund: This work is supported by the National Key Research and Development Program of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant Nos. 62488201, 92580202, 52572188, 52572063, and 52350322), the CAS Project for Young Scientists in Basic Research (Grant Nos. YSBR-053 and YSBR- 003), the Fundamental Research Funds for the Central Universities (Grant Nos. FRF-TP-24-055A and FRF-IDRY-24-007), and the State Key Lab for Advanced Metals and Materials (Grant Nos. 41601124 and 41601126). |
Corresponding Authors:
Hui Guo, Yixuan Gao, Hui Chen
E-mail: guohui@iphy.ac.cn;gaoyixuan@ustb.edu.cn;hchenn04@iphy.ac.cn
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Cite this article:
Jiayi Wang(王嘉翌), Qiuchen Yu(余秋辰), Hui Guo(郭辉), Peng Fan(范朋), Siyu Xu(徐思宇), Yixuan Gao(高艺璇), Hui Chen(陈辉), and Hong-Jun Gao(高鸿钧) Epitaxial growth of quasi-one-dimensional TaNi2Se2 monolayer with anisotropic electronic and mechanical properties 2026 Chin. Phys. B 35 077303
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