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Chin. Phys. B, 2026, Vol. 35(6): 066101    DOI: 10.1088/1674-1056/ae521a
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High-pressure synthesis, crystal structure, and electronic properties of Ba9Zr2.79Te15

Runteng Chen(陈润滕)1,2,†, Guodong Wang(王国东)2,†, Zhe Wang(王哲)3,†, Wenmin Li(李文敏)4, Jianfa Zhao(赵建发)2,5, Zheng Deng(邓正)2,5, Heng Wang(王恒)1,‡, Xiancheng Wang(望贤成)2,5,§, Jun Zhang(张俊)2,5,¶, and Changqing Jin(靳常青)2,5,#
1 College of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541008, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang 050024, China;
4 Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China;
5 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China
Abstract  The polycrystalline Ba$_{9}$Zr$_{2.79}$Te$_{15}$ sample was prepared by employing a solid-state synthesis method under high-temperature and high-pressure conditions. Comprehensive characterizations of structural and electrical properties were performed. Ba$_{9}$Zr$_{2.79}$Te$_{15}$ crystallizes in a hexagonal lattice with the space group $P\bar{6}c$2 (No. 188) and lattice parameters $a = 10.1977(8)$ Å and $c = 20.2646(9)$ Å. It is mainly composed of face-sharing ZrTe$_{6}$ octahedral chains extending along the $c$-axis, which form a triangular lattice in the ab plane. The Te chains are located in the middle of the ZrTe$_{6}$ triangular lattice. Electrical transport measurements indicate that Ba$_{9}$Zr$_{2.79}$Te$_{15}$ is a semiconductor. The thermal activation band gap of 0.23 eV is qualitatively discussed when compared with that of its sister compound Ba$_{9}$Zr$_{3}$Se$_{15}$, proving that the p electrons in the Te chains, with high quantum number orbitals, dominate electron conduction. Furthermore, the Debye temperature of Ba$_{9}$Zr$_{2.79}$Te$_{15}$ is calculated to be 157.28(9) K from thermodynamic measurements. The newly synthesized Ba$_{9}$Zr$_{2.79}$Te$_{15}$ with quasi-one-dimensional chain characteristics provides an opportunity for further exploration of diverse physical properties.
Keywords:  high pressure synthesis      quasi one-dimensional structure      semiconductor  
Received:  08 February 2026      Revised:  13 March 2026      Accepted manuscript online:  16 March 2026
PACS:  61.05.cp (X-ray diffraction)  
  61.66.Fn (Inorganic compounds)  
  61.82.Fk (Semiconductors)  
  65.40.Ba (Heat capacity)  
Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2023YFA1406001 and 2024YFA140800) and the National Natural Science Foundation of China (Grant Nos. 12104488 and 12474097).
Corresponding Authors:  Heng Wang, Xiancheng Wang, Jun Zhang, Changqing Jin     E-mail:  wangh@glut.edu.cn;wangxiancheng@iphy.ac.cn;zhang@iphy.ac.cn;jin@iphy.ac.cn

Cite this article: 

Runteng Chen(陈润滕), Guodong Wang(王国东), Zhe Wang(王哲), Wenmin Li(李文敏), Jianfa Zhao(赵建发), Zheng Deng(邓正), Heng Wang(王恒), Xiancheng Wang(望贤成), Jun Zhang(张俊), and Changqing Jin(靳常青) High-pressure synthesis, crystal structure, and electronic properties of Ba9Zr2.79Te15 2026 Chin. Phys. B 35 066101

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