| TOPICAL REVIEW — Multiferroicity and multicaloric effects |
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Two-dimensional van der Waals multiferroic tunnel junctions for multi-state, low-power spintronics: A review |
| Zhi Yan(严志)1,2, Jianhua Xiao(肖建华)1, Ruixia Yang(杨瑞霞)1, and Xiaohong Xu(许小红)1,2,† |
1 School of Materials Science and Engineering & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030031, China;
2 Research Institute of Materials Science & Shanxi Key Laboratory of Advanced Magnetic Materials and Devices Shanxi Normal University, Taiyuan 030031, China |
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Abstract The convergence of spintronics and multiferroics has enabled unprecedented control of charge and spin degrees of freedom, opening new avenues for multifunctional tunnel junctions. This review provides a systematic overview of multiferroic materials and their integration into tunnel junction devices. First, we categorize multiferroics into type-I, type-II, and heterostructures, discussing synthesis strategies, material design, and approaches for tuning ferroic properties and magnetoelectric coupling. Next, we examine tunnel junctions, including magnetic and ferroelectric types, and focus on multiferroic tunnel junctions (MFTJs), highlighting the mechanisms underlying tunneling magnetoresistance (TMR) and tunneling electroresistance (TER), as well as the roles of interfacial engineering, electrode asymmetry, and multifield control. Special attention is given to emerging two-dimensional van der Waals MFTJs, which offer multi-level data storage, ultralow-power operation, and efficient spin filtering. Finally, we discuss challenges and future directions, emphasizing the importance of room-temperature, strongly coupled 2D multiferroics, scalable fabrication, and interface optimization for next-generation nonvolatile memory and multifunctional spintronic applications.
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Received: 14 November 2025
Revised: 10 January 2026
Accepted manuscript online: 23 January 2026
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PACS:
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73.40.-c
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(Electronic transport in interface structures)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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75.85.+t
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(Magnetoelectric effects, multiferroics)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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| Fund: Project supported by the National Natural Science Foundation of China Regional Innovation and Development Joint Fund Key Program (Grant No. U24A6002), the National Natural Science Foundation of China (Grant No. 12304148), and the Shanxi Natural Science Basic Research Program (Grant No. 202203021222219). |
Corresponding Authors:
Xiaohong Xu
E-mail: xuxh@sxnu.edu.cn
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Cite this article:
Zhi Yan(严志), Jianhua Xiao(肖建华), Ruixia Yang(杨瑞霞), and Xiaohong Xu(许小红) Two-dimensional van der Waals multiferroic tunnel junctions for multi-state, low-power spintronics: A review 2026 Chin. Phys. B 35 067304
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