Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

doi:10.1088/1674-1056/ab5d02

Abstract Spin-dependent transport in ferromagnet/organic-ferromagnet/metal junctions is investigated theoretically. The results reveal a large tunneling magnetoresistance up to 3230% by controlling the relative magnetization orientation between the ferromagnet and the central organic ferromagnet. The mechanism is explained by distinct efficient spin-resolved tunneling states in the ferromagnet between the parallel and antiparallel spin configurations. The key role of the organic ferromagnet in generating the large magnetoresistance is explored, where the spin selection effect is found to enlarge the difference of the tunneling states between the parallel and antiparallel configurations by comparing with the conventional organic spin valves. The effects of intrinsic interactions in the organic ferromagnet including electron-lattice interaction and spin coupling with radicals on the magnetoresistance are discussed. This work demonstrates a promising potential of organic ferromagnets in the design of high-performance organic spin valves.

Keywords: organic ferromagnet organic spintronics tunneling magnetoresistance

Received: 03 October 2019
Revised: 13 November 2019
Accepted manuscript online:

PACS:	73.63.-b	(Electronic transport in nanoscale materials and structures)
	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)
	85.75.-d	(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11974215, 11704230, 11674197, and 11874242), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA043), and the Taishan Scholar Project of Shandong Province, China.

Corresponding Authors: Gui-Chao Hu
E-mail: hgc@sdnu.edu.cn

Cite this article:

Yan-Qi Li(李彦琪), Hong-Jun Kan(阚洪君), Yuan-Yuan Miao(苗圆圆), Lei Yang(杨磊), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), Gui-Chao Hu(胡贵超) Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions 2020 Chin. Phys. B 29 017303

[1]	Dieny B, Speriosu V S, Parkin S S P, Gurney B A, Wilhoit D R and Mauri D 1991 Phys. Rev. B 43 1297
[2]	Park B G, Wunderlich J, Martí X, Holý V, Kurosaki Y, Yamada M, Yamamoto H, Nishide A, Hayakawa J, Takahashi H, Shick A B and Jungwirth T 2011 Nat. Mater. 10 347
[3]	Cai K M, Yang M Y, Ju H L, Wang S M, Ji Y, Li B H, Edmonds K W, Sheng Y, Zhang B, Zhang N, Liu S, Zheng H Z and Wang K Y 2017 Nat. Mater. 16 712
[4]	Sheng Y, Edmonds K W, Ma X Q, Zheng H Z and Wang K Y 2018 Adv. Electron. Mater. 4 1800224
[5]	Cao Y, Rushforth A W, Sheng Y, Zheng H Z and Wang K Y 2019 Adv. Funct. Mater. 29 1808104
[6]	Xiong Z H, Wu D, Vardeny Z V and Shi J 2004 Nature 427 821
[7]	Schoonus J J H M, Lumens P G E, Wagemans W, Kohlhepp J T, Bobbert P A, Swagten H J M and Koopmans B 2009 Phys. Rev. Lett. 103 146601
[8]	Santos T S, Lee J S, Migdal P, Lekshmi I C, Satpati B and Moodera J S 2007 Phys. Rev. Lett. 98 016601
[9]	Sun D, Yin L, Sun C, Guo H, Gai Z, Zhang X G, Ward T Z, Cheng Z and Shen J 2010 Phys. Rev. Lett. 104 236602
[10]	Devkota J, Geng R, Subedi R C and Nguyen T D 2016 Adv. Funct. Mater. 26 3881
[11]	Liu R, Bi J J, Xie Z, Yin K K, Wang D Y, Zhang G P, Xiang D, Wang C K and Li Z L 2018 Phys. Rev. Appl. 9 054023
[12]	Li Z L, Sun F, Bi J J, Liu R, Suo Y Q, Fu H Y, Zhang G P, Song Y Z, Wang D Y and Wang C K 2019 Physica E 106 270
[13]	Sun F, Liu R, Suo Y Q, Niu L L, Fu H Y, Ji W F and Li Z L 2019 Acta. Phys. Sin. 68 178502 (in Chinese)
[14]	Pramanik S, Stefanita C G, Patibandla S, Bandyopadhyay S, Garre K, Harth N and Cahay M 2007 Nat. Nanotechnol. 2 216
[15]	Sanvito S 2010 Nat. Phys. 6 562
[16]	Dediu V A, Hueso L E, Bergenti I and Taliani C 2009 Nat. Mater. 8 707
[17]	Barraud C, Seneor P, Mattana R, Fusil S, Bouzehouane K, Deranlot C, Graziosi P, Hueso L, Bergenti I, Dediu V, Petroff F and Fert A 2010 Nat. Phys. 6 615
[18]	Yue F J, Shi Y J, Chen B B, Ding H F, Zhang F M and Wu D 2012 Appl. Phys. Lett. 101 022416
[19]	Yu C J, Miao Y Y, Qiu S, Cui Y J, He G M, Zhang G P, Wang C K and Hu G C 2018 J. Phys. D: Appl. Phys. 51 345302
[20]	Yoo J W, Edelstein R S, Lincoln D M, Raju N P, Xia C, Pokhodnya K I, Miller J S and Epstein A J 2006 Phys. Rev. Lett. 97 247205
[21]	Fang Z, Liu Z L and Yao K L 1994 Phys. Rev. B 49 3916
[22]	Fang Z, Liu Z L, Yao K L and Li Z G 1995 Phys. Rev. B 51 1304
[23]	Yoo J W, Chen C Y, Jang H W, Bark C W, Prigodin V N, Eom C B and Epstein A J 2010 Nat. Mater. 9 638
[24]	Li B, Zhou M Q, Lu Y, Kao C Y, Yoo J W, Prigodin V N and Epstein A J 2012 Org. Electron. 13 1261
[25]	Hayakawa R, Karimi M A, Wolf J, Huhn T, Zöllner M S, Herrmann C and Scheer E 2016 Nano Lett. 16 4960
[26]	Hu G C, Guo Y, Wei J H and Xie S J 2007 Phys. Rev. B 75 165321
[27]	Wang W Z 2006 Phys. Rev. B 73 235325
[28]	Hu G C, Zhang Z, Zhang G P, Ren J F and Wang C K 2016 Org. Electron. 37 485
[29]	Hu G C, Zuo M Y, Li Y, Ren J F and Xie S J 2014 Appl. Phys. Lett. 104 033302
[30]	Ovchinnikov A A and Spector V N 1988 Synth. Met. 27 615
[31]	Alberola A and Pilkington M 2009 Curr. Org. Synth. 6 66
[32]	Su W P, Schrieffer J R and Heeger A J 1979 Phys. Rev. Lett. 42 1698
[33]	Shuai Z, Pati S K, Su W P, Brédas J L and Ramasesha S 1997 Phys. Rev. B 55 15368
[34]	Xie S J, Ahn K H, Smith D L, Bishop A R and Saxena A 2003 Phys. Rev. B 67 125202
[35]	Mujica V, Roitberg A E and Ratner M 2000 J. Chem. Phys. 112 6834
[36]	Datta S 1995 Electronic Transport in Mesoscopic Systems (New York: Oxford University Press) p. 92
[37]	Miao Y Y, Qiu S, Zhang G P, Ren J F, Wang C K and Hu G C 2018 Org. Electron. 55 133
[38]	Miao Y Y, Qiu S, Zhang G P, Ren J F, Wang C K and Hu G C 2018 Phys. Rev. B 98 235415
[39]	Aschcroft N W and Mermin N D 1976 Solid State Physics (Philadelphia: Saunders College) p. 290
[40]	Cao Y, Wang P, Hu Z Y, Li S Z, Zhang L Y and Zhao J G 1988 Synth. Met. 27 625
[41]	Botton G A, Guo G Y, Temmerman W M and Humphreys C J 1996 Phys. Rev. B 54 1682
[42]	He G M, Qiu S, Cui Y J, Yu C J, Miao Y Y, Zhang G P, Ren J F, Wang C K and Hu G C 2019 J. Mater. Sci. 54 5551
[43]	Park C H, Lee B C and Lee J I 2005 J. Korean. Phys. Soc. 47 655
[44]	Wang F J, Xiong Z H, Wu D, Shi J and Vardeny Z V 2005 Synth. Met. 155 172
[45]	Liu Y Y, Li B L, Chen S Z, Jiang X W and Chen K Q 2017 Appl. Phys. Lett. 111 133107
[46]	Li B L and Chen K Q 2016 J. Phys.: Condens. Matter 29 075301
[47]	Wei J H, Xie S J, Mei L M, Berakdar J and Yan Y J 2007 Org. Electron. 8 487
[48]	Zeng J and Chen K Q 2014 Appl. Phys. Lett. 104 033104
[49]	Wu D, Cao X H, Chen S Z, Tang L M, Feng Y X, Chen K Q and Zhou W X 2019 J. Mater. Chem. A 7 19037

[1]	Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures Wenyu Huang(黄文宇), Cangmin Wang(王藏敏), Yichao Liu(刘艺超), Shaoting Wang(王绍庭), Weifeng Ge(葛威锋), Huaili Qiu(仇怀利), Yuanjun Yang(杨远俊), Ting Zhang(张霆), Hui Zhang(张汇), and Chen Gao(高琛). Chin. Phys. B, 2022, 31(9): 097502.
[2]	Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature Longfei Pan(潘龙飞), Hongyu Wen(文宏玉), Le Huang(黄乐), Long Chen(陈龙), Hui-Xiong Deng(邓惠雄), Jian-Bai Xia(夏建白), Zhongming Wei(魏钟鸣). Chin. Phys. B, 2019, 28(10): 107504.
[3]	Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations Yi-Man Liu(刘一曼), Huai-Hua Shao(邵怀华), Guang-Hui Zhou(周光辉), Hong-Guang Piao(朴红光), Li-Qing Pan(潘礼庆), Min Liu(刘敏). Chin. Phys. B, 2017, 26(12): 127303.
[4]	Length dependence of rectification in organic co-oligomer spin rectifiers Gui-Chao Hu(胡贵超), Zhao Zhang(张朝), Ying Li(李营), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎). Chin. Phys. B, 2016, 25(5): 057308.
[5]	Effect of interfacial coupling on rectification in organic spin rectifiers Hu Gui-Chao (胡贵超), Zuo Meng-Ying (左梦莹), Li Ying (李营), Zhang Zhao (张朝), Ren Jun-Feng (任俊峰), Wang Chuan-Kui (王传奎). Chin. Phys. B, 2015, 24(7): 077308.
[6]	Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction Luan Gui-Ping (栾桂苹), Zhang Pei-Ran (张沛然), Jiao Na (焦娜), Sun Li-Zhong (孙立忠). Chin. Phys. B, 2015, 24(11): 117201.
[7]	Spin-excited states and rectification in an organic spin rectifier Zuo Meng-Ying (左梦莹), Hu Gui-Chao (胡贵超), Li Ying (李营), Ren Jun-Feng (任俊峰), Wang Chuan-Kui (王传奎). Chin. Phys. B, 2014, 23(8): 087306.
[8]	The basis of organic spintronics：Fabrication of organic spin valves Chen Bin-Bin (陈彬彬), Jiang Sheng-Wei (姜生伟), Ding Hai-Feng (丁海峰), Jiang Zheng-Sheng (蒋正生), Wu Di (吴镝). Chin. Phys. B, 2014, 23(1): 018104.
[9]	The effect of dimerization on the magnetoresistance in organic spin valves Wang Hui (王辉), Hu Gui-Chao (胡贵超), Ren Jun-Feng (任俊峰). Chin. Phys. B, 2013, 22(5): 058504.
[10]	The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system Wang Yu-Mei (王玉梅), Ren Jun-Feng (任俊峰), Yuan Xiao-Bo (原晓波), Dou Zhao-Tao (窦兆涛), Hu Gui-Chao (胡贵超). Chin. Phys. B, 2012, 21(10): 108508.
[11]	Effect of proportion on rectification in organic co-oligomer spin rectifiers Hu Gui-Chao(胡贵超), Wang Hui(王辉), and Ren Jun-Feng(任俊峰). Chin. Phys. B, 2011, 20(7): 077306.
[12]	Kondo effect in a deformed molecule coupled asymmetrically to ferromagnetic electrodes Wang Rui-Qiang(王瑞强) and Jiang Kai-Ming(蒋开明) . Chin. Phys. B, 2009, 18(12): 5443-5450.
[13]	Critical behaviour of coupled organic ferromagnet chains Guo Ji-Yong (郭继勇), Chen Yu-Guang (陈宇光), Chen Hong (陈鸿). Chin. Phys. B, 2005, 14(4): 821-825.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

Cite this article:

Online attention