Two-dimensional XSe2 (X=Mn, V) based magnetic tunneling junctions with high Curie temperature

doi:10.1088/1674-1056/ab3e45

Abstract Two-dimensional (2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research, magnetic tunneling junctions (MTJs) based on XSe₂ (X=Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance (TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe₂. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias. The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe₂ (X=Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.

Keywords: two-dimensional material magnetic tunneling junctions tunneling magnetoresistance ferromagnetism

Received: 13 August 2019
Revised: 25 August 2019
Accepted manuscript online:

PACS:	75.70.Cn	(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
	75.70.Ak	(Magnetic properties of monolayers and thin films)
	68.65.-k	(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61571415 and 61622406), the National Key Research and Development Program of China (Grant No. 2017YFA0207500), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30000000), and Beijing Academy of Quantum Information Sciences, China (Grant No. Y18G04).

Corresponding Authors: Hongyu Wen, Zhongming Wei
E-mail: wenhongyu@semi.ac.cn;zmwei@semi.ac.cn

Cite this article:

Longfei Pan(潘龙飞), Hongyu Wen(文宏玉), Le Huang(黄乐), Long Chen(陈龙), Hui-Xiong Deng(邓惠雄), Jian-Bai Xia(夏建白), Zhongming Wei(魏钟鸣) Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature 2019 Chin. Phys. B 28 107504

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Two-dimensional XSe2 (X=Mn, V) based magnetic tunneling junctions with high Curie temperature

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Two-dimensional XSe₂ (X=Mn, V) based magnetic tunneling junctions with high Curie temperature