Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor

doi:10.1088/1674-1056/acb41c

Abstract High purity SiC crystal was used as a passive monitor to measure neutron irradiation temperature in the 49-2 research reactor. The SiC monitors were irradiated with fast neutrons at elevated temperatures to 3.2×10²⁰ n/cm². The isochronal and isothermal annealing behaviors of the irradiated SiC were investigated by x-ray diffraction and four-point probe techniques. Invisible point defects and defect clusters are found to be the dominating defect types in the neutron-irradiated SiC. The amount of defect recovery in SiC reaches a maximum value after isothermal annealing for 30 min. Based on the annealing temperature dependences of both lattice swelling and material resistivity, the irradiation temperature of the SiC monitors is determined to be ～ 410 ℃, which is much higher than the thermocouple temperature of 275 ℃ recorded during neutron irradiation. The possible reasons for the difference are carefully discussed.

Keywords: silicon carbide irradiation temperature monitor research reactor

Received: 05 December 2022
Revised: 13 January 2023
Accepted manuscript online: 18 January 2023

PACS:	61.80.Hg	(Neutron radiation effects)
	28.52.Lf	(Components and instrumentation)
	28.50.Dr	(Research reactors)

Corresponding Authors: Li-Min Zhang, Wei-Hua Zhong
E-mail: zhanglm@lzu.edu.cn;zhongwh@ciae.ac.cn

Cite this article:

Guang-Sheng Ning(宁广胜), Li-Min Zhang(张利民), Wei-Hua Zhong(钟巍华), Sheng-Hong Wang(王绳鸿), Xin-Yu Liu(刘心语), Ding-Ping Wang(汪定平), An-Ping He(何安平), Jian Liu(刘健), and Chang-Yi Zhang(张长义) Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor 2023 Chin. Phys. B 32 056102

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Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor

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