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Chinese Physics, 2006, Vol. 15(4): 833-838    DOI: 10.1088/1009-1963/15/4/028

The role of hydrogen in negative bias temperature instability of pMOSFET

Li Zhong-He (李忠贺), Liu Hong-Xia (刘红侠), Hao Yue (郝跃)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  The NBTI degradation phenomenon and the role of hydrogen during NBT stress are presented in this paper. It is found that PBT stress can recover a fraction of Vth shift induced by NBTI. However, this recovery is unstable. The original degradation reappears soon after reapplication of the NBT stress condition. Hydrogen-related species play a key role during a device's NBT degradation. Experimental results show that the diffusion species are neutral, they repassivate Si dangling bond which is independent of the gate voltage polarity. In addition to the diffusion towards gate oxide, hydrogen diffusion to Si-substrate must be taken into account for it also has important influence on device degradation during NBT stress.
Keywords:  negative bias temperature instability      device degradation      hydrogen diffusion      interface traps  
Received:  06 October 2005      Revised:  07 November 2005      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  68.35.Dv (Composition, segregation; defects and impurities)  
  68.35.Fx (Diffusion; interface formation)  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60206006), the Hi-Tech Research & Development Program of China (Grant No 2004AA1Z1070) and the Key Project of Chinese Ministry of Education (Grant No 104172).

Cite this article: 

Li Zhong-He (李忠贺), Liu Hong-Xia (刘红侠), Hao Yue (郝跃) The role of hydrogen in negative bias temperature instability of pMOSFET 2006 Chinese Physics 15 833

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