Please wait a minute...
Chinese Physics B
Chin. Phys. B, 2020, Vol. 29(10): 108502    DOI: 10.1088/1674-1056/ab9c06
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis
Hui-Fang Xu(许会芳)†, Xin-Feng Han(韩新风), and Wen Sun(孙雯)
1 Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyang 233100, China
Abstract  

The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time; it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.
Keywords:  dopingless tunnel field effect transistor      line tunneling      linearity parameters  
Received:  13 April 2020      Revised:  20 May 2020      Accepted manuscript online:  12 June 2020
PACS:  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  81.05.Ea (III-V semiconductors)  
  85.30.Tv (Field effect devices)  
Corresponding Authors:  †Corresponding author. E-mail: xu0342@163.com   
About author: 
†Corresponding author. E-mail: xu0342@163.com
* Project supported by the Natural Science Research Key Project of Universities of Anhui Province, China (Grant No. KJ2017A502), the Introduced Talent Project of Anhui Science and Technology University, China (Grant No. DQYJ201603), and the Excellent Talents Supported Project of Colleges and Universities, China (Grant No. gxyq2018048).

Cite this article: 

Hui-Fang Xu(许会芳)†, Xin-Feng Han(韩新风), and Wen Sun(孙雯) Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis 2020 Chin. Phys. B 29 108502

Fig. 1.  

Structure of devices of (a) PT−DLTFET, (b) LT−DLTFET, and (c) M−LT−DLTFET.
Parameter Symbol PT−DLTFET LT−DLTFET M−LT−DLTFET
Top gate length LTG 55 nm 55 nm 55 nm
Bottom gate length LBG 55 nm 50 nm 50 nm
Source length LS 20 nm 20 nm 20 nm
Drain length LD 20 nm 20 nm 20 nm
Distance between top gate and source electrode LTGS 5 nm 5 nm 5 nm
Distance between top gate and drain electrode LTGD 10 nm 10 nm 10 nm
Distance between bottom gate and drain electrode LBGD 10 nm 20 nm 20 nm
Oxide layer thickness TOX 3 nm 3 nm 3 nm
Ge body thickness TGe 10 nm 10 nm 10 nm
Top gate work function WKTG 4.2 eV 3.9 eV 3.9 eV
Bottom gate work function WKBG 4.2 eV 4.6 eV 4.6 eV
Metal work function WKM 3.9 eV
Source electrode work function WKS 5.9 eV 5.9 eV 5.9 eV
Drain electrode work function WKD 3.9 eV 3.9 eV 3.9 eV
Table 1.  

Material parameters and dimensions of devices.
Fig. 2.  

Plot of energy varying with distance for M−LT−DLTFET along (a) A–A’ direction, and (b) B–B’ direction under on-state condition, (c) plots of electron and hole concentrations varying with top-bottom distance along B–B’ direction under on-state condition.
Fig. 3.  

(a) Electric field varying with distance along cutline A–A’, (b) electron current density varying with distance along cutline A–A’, (c) transfer characteristics, and (d) extracted SS varying with Ids for the devices.
Parameter PT_DLTFET LT_DLTFET M_LT_DLTFET
Ion/(A/μm) 1.90117×10−6 4.44004×10−6 1.14652×10−5
Ion/Ioff 4.19×108 9.81×108 1.48×109
Iamb/(A/μm) 5.01×10−15 4.69×10−15 4.67×10−15
SSavg/(mV/dec) 72.52 44.07 34.15
SSmin/(mV/dec) 27.47 29.36 26.23
Vth/V 0.34 0.2 0.16
Table 2.  

Comparison of DC parameter among devices.
Fig. 4.  

Plots of energy varying with distance at different values of LTGS (a) along cutline A–A’ when Vgs is fixed at 0.2 V, (b) along cutline A–A’ when Vgs is fixed at 1 V, (c) along cutline B–B’ when Vgs is fixed at 0.2 V, and (d) along cutline B–B’ when Vgs is fixed at 1 V.
Fig. 5.  

(a) Transfer characteristics, and (b) electric fields varying with distance along A–A’ direction for proposed device with different distances between source and top-gate electrode.
Fig. 6.  

(a) Transfer characteristics, and (b) energy varying with distance along A–A’ direction for proposed device with different distances between top-gate and drain electrode.
Fig. 7.  

Plots of energyvarying with distance along (a) A–A’, and (b) C–C’ direction for proposed device with different distances between bottom-gate and drain electrode.
Fig. 8.  

Plots of Ids versus Vgs for M−LT−DLTFET with metal at different positions along (a) x direction and (b) y direction, (c) for different work functions of metal.
Fig. 9.  

Plots of (a) gm, (b) Cgd, (c) Cgg versus Vgs for three devices.
Fig. 10.  

RF parameters of (a) ft, (b) GBP, and (c) TFP for three devices.
Fig. 11.  

Plots of (a) gm2, and (b) gm3 versus Vgs for three devices.
Fig. 12.  

Linearity parameters of (a) VIP2, (b) VIP3, (c) IIP3, and (d) IMD3 for three devices.
Fig. 13.  

Plots of (a) HD2, and (b) HD3 versus Vgs for three devices.
[1]
Eshaan B, Kaushal N, Shubham C, Savitesh C 2019 Micro & Nano Lett. 14 1238 DOI: 10.1049/mnl.2019.0252
[2]
Dash S, Mishra G P 2015 Superlattices Microstruct. 86 211 DOI: 10.1016/j.spmi.2015.07.049
[3]
Vishnoi R, Kumar M J 2014 IEEE Trans. Electron Dev. 61 2599 DOI: 10.1109/TED.2014.2322762
[4]
Dash S, Mishra G P 2015 Adv. Nat. Sci.: Nanosci. Nanotechnol. 6 035005 DOI: 10.1088/2043-6262/6/3/035005
[5]
Sharma A, Goud A A, Roy K 2014 IEEE Electron Dev. Lett. 35 1221 DOI: 10.1109/LED.2014.2365413
[6]
Ameen T A, Ilatikhameneh H, Fay P, Seabaugh A, Rahman R, Klimeck G 2019 IEEE Trans. Electron Dev. 66 736 DOI: 10.1109/TED.2018.2877753
[7]
Sanjay K, Kunal S, Sweta C, Ekta G, Prince K S, Kamalaksha B, Balraj S, Satyabrata J 2018 IEEE Trans. Electron Dev. 65 331 DOI: 10.1109/TED.2017.2773560
[8]
Dong Y P, Zhang LN, Li X B, Lin XN, Chan M S 2016 IEEE Trans. Electron Dev. 63 4506 DOI: 10.1109/TED.2016.2604001
[9]
Ahish S, Sharma D, Vasantha M H, Kumar Y B N 2016 Superlattices Microstruct. 94 119 DOI: 10.1016/j.spmi.2016.04.008
[10]
Boucart K, Ionescu A M 2007 IEEE Trans. Electron Dev. 54 1725 DOI: 10.1109/TED.2007.899389
[11]
Naveen K, Ashish R 2019 IEEE Trans. Electron Dev. 66 1468 DOI: 10.1109/TED.2019.2893224
[12]
Guan Y H, Li Z C, Zhang W H, Zhang Y F, Liang F 2018 IEEE Trans. Electron Dev. 65 5213 DOI: 10.1109/TED.2018.2870171
[13]
Vishnoi R, Kumar M J 2014 IEEE Trans. Electron Dev. 61 2264 DOI: 10.1109/TED.2014.2321977
[14]
Kim S W, Kim J H, Liu T J K, Choi W Y, Park B G 2016 IEEE Trans. Electron Dev. 63 1774 DOI: 10.1109/TED.2015.2472496
[15]
Chen S, Wang S, Liu H, Li W, Wang Q, Wang X 2017 IEEE Trans. Electron Dev. 64 1343 DOI: 10.1109/TED.2017.2647809
[16]
Wang Q Q, Liu H X, Wang S L, Chen S P 2018 IEEE Trans. Nucl. Sci. 65 2250 DOI: 10.1109/TNS.2018.2851366
[17]
Prabhat K D, Brajesh K K 2017 IEEE Trans. Electron Dev. 64 3120 DOI: 10.1109/TED.2017.2715853
[18]
Han R, Zhang H C, Wang D H, Li C 2019 Chin. Phys. B 28 018505 DOI: 10.1088/1674-1056/28/1/018505
[19]
Wu J Z, Taur Y 2016 IEEE Trans. Electron Dev. 63 3342 DOI: 10.1109/TED.2016.2577589
[20]
Xu P, Lou H, Zhang L, Yu Z, Lin X 2017 IEEE Trans. Electron Dev. 64 5242 DOI: 10.1109/TED.2017.2762861
[21]
Kumar P, Bhowmick B 2018 Micro & Nano Lett. 13 626 DOI: 10.1049/mnl.2017.0895
[22]
Liu H, Yang L A, Jin Z, Hao Y 2019 IEEE Trans. Electron Dev. 66 3229 DOI: 10.1109/TED.16
[23]
Apoorva, Kumar N, Amin S I, Anand S 2020 IEEE Trans. Electron Dev. 67 789 DOI: 10.1109/TED.16
[24]
Naveen K, Ashish R 2019 IEEE Trans. Electron Dev. 66 4453 DOI: 10.1109/TED.16
[25]
Lin J T, Wang T C, Lee W H, Yeh C T, Glass S, Zhao Q T 2018 IEEE Trans. Electron Dev. 65 769 DOI: 10.1109/TED.16
[26]
Bagga N, Kumar A, Dasgupta S 2017 IEEE Trans. Electron Dev. 64 5256 DOI: 10.1109/TED.2017.2759898
[27]
Gaurav M, Shubham S, Raghvendra S S, Mamidala J K 2019 IEEE Trans. Electron Dev. 66 4425 DOI: 10.1109/TED.16
[28]
Ehteshamuddin M, Loan S A, Alharbi A G, Alamoud A M, Rafat M 2019 IEEE Trans. Electron Dev. 66 4638 DOI: 10.1109/TED.16
[29]
Tripuresh J, Yashvir S, Balraj S 2020 IEEE Trans. Electron Dev. 67 1873 DOI: 10.1109/TED.16
[30]
Prabhat K D, Brajesh K K 2017 IEEE Trans. Electron Dev. 64 3120 DOI: 10.1109/TED.2017.2715853
[31]
Li W, Liu H X, Wang S L, Chen S P, Han T, Yang K 2019 AIP Adv. 9 045109 DOI: 10.1063/1.5087879
[32]
ATLAS User’s Manual Silvaco Int. Santa Clara, CA 2012
[33]
Wu C L, Huang Q Q, Zhao Y, Wang J X, Wang Y Y, Huang R 2016 IEEE Trans. Electron Dev. 63 5072 DOI: 10.1109/TED.2016.2619694
[1] Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance
Bin Wang(王斌)†, Sheng Hu(胡晟), Yue Feng(冯越), Peng Li(李鹏), Hui-Yong Hu(胡辉勇), and Bin Shu(舒斌). Chin. Phys. B, 2020, 29(10): 107401.
No Suggested Reading articles found!
Authors
  • Submit an article
  • Manuscript tracking
  • Call for papers
  • Scope
  • Instruction for authors
  • Copyright agreement
  • Templates
  • PACS
  • Flow chart
  • Author FAQs
    • Referees
  • Review policy
  • Referee login
  • Referee FAQs
  • Editor in chief login
  • Editor login
  • Office login
    • Browse
  • In press
  • Current issue
  • Previous issues
  • Special topics
  • Author index
  • Highlights
  • Annual highlights
  • View by fields
  • Top downloaded
  • SCI top cited
    • About
  • About CPB
  • Editorial board
  • Editorial Board of Young Scientists
  • SCI IF
  • Staff
  • Contact us
    • Copyright © Editorial Office of Chinese Physics B, All Rights Reserved.
    • Tel: 010-82649026   Fax: 010-82649027   E-mail: cpb@aphy.iphy.ac.cn
    • Sponsored by Institute of Physics, CAS & Chinese Physical Society
      Collaborating with IOP Publishing, UK in distribution