As is well known, the basic intrinsic properties of materials can be significant for their practical applications. In this work, the room-temperature absorption, transmittance, reflectance spectra, and relative photoelectricities parameters of the Mg4Ta2O9 crystals are demonstrated. Meanwhile, the polarized Raman spectra of Mg4Ta2O9 crystals are also described. The room-temperature photoluminescence (PL) and the temperature-dependent PL for Mg4Ta2O9 crystals are obtained. Significantly, we observe a phonon-participated PL process in Mg4Ta2O9.
(Magnetometers for susceptibility, magnetic moment, and magnetization measurements)
Fund:
Project supported by the National Key Research and Development Program, China (Grant No. 2017YFA0403704), the National Natural Science Foundation of China (Grant Nos. 11304113, 11474127, and 11574112), and the Fundamental Research Funds for the Central Universities, China.
Enhanced absorption process in the thin active region of GaAs based p-i-n structure Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘). Chin. Phys. B, 2021, 30(9): 097803.
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