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Chin. Phys. B, 2020, Vol. 29(1): 018501    DOI: 10.1088/1674-1056/ab5932
Special Issue: Virtual Special Topic — Magnetism and Magnetic Materials
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Visualization of tunnel magnetoresistance effect in single manganite nanowires

Yang Yu(郁扬)1, Wenjie Hu(胡雯婕)1, Qiang Li(李强)1, Qian Shi(时倩)1, Yinyan Zhu(朱银燕)1, Hanxuan Lin(林汉轩)1, Tian Miao(苗田)1, Yu Bai(白羽)1, Yanmei Wang(王艳梅)1, Wenting Yang(杨文婷)1, Wenbin Wang(王文彬)2, Hangwen Guo(郭杭闻)2, Lifeng Yin(殷立峰)1,2,3, Jian Shen(沈健)1,2,3
1 State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;
2 Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China;
3 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
Abstract  We reported a study of tunnel magnetoresistance (TMR) effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging. TMR value up to 290% has been observed in single (La1-yPry)1-xCaxMnO3 nanowires with varying width. We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions. Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.
Keywords:  manganite nanowires      tunnel magnetoresistance      magnetic force microscope  
Received:  16 November 2019      Accepted manuscript online: 
PACS:  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  07.79.Pk (Magnetic force microscopes)  
  71.27.+a (Strongly correlated electron systems; heavy fermions)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0300702), Shanghai Municipal Natural Science Foundation, China (Grant Nos. 19ZR1402800, 18JC1411400, 18ZR1403200, and 17ZR1442600), the Program of Shanghai Academic Research Leader, China (Grant Nos. 18XD1400600 and 17XD1400400), and the China Postdoctoral Science Foundation (Grant Nos. 2016M601488 and 2017T100265).
Corresponding Authors:  Hangwen Guo, Lifeng Yin, Jian Shen     E-mail:  hangwenguo@fudan.edu.cn;lifengyin@fudan.edu.cn;shenj5494@fudan.edu.cn

Cite this article: 

Yang Yu(郁扬), Wenjie Hu(胡雯婕), Qiang Li(李强), Qian Shi(时倩), Yinyan Zhu(朱银燕), Hanxuan Lin(林汉轩), Tian Miao(苗田), Yu Bai(白羽), Yanmei Wang(王艳梅), Wenting Yang(杨文婷), Wenbin Wang(王文彬), Hangwen Guo(郭杭闻), Lifeng Yin(殷立峰), Jian Shen(沈健) Visualization of tunnel magnetoresistance effect in single manganite nanowires 2020 Chin. Phys. B 29 018501

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