Phase transition and charge transport through a triple dot device beyond the Kondo regime

doi:10.1088/1674-1056/27/10/108503

Abstract

Semiconductor quantum dot structure provides a promising basis for quantum information processing, within which to reveal the quantum phase and charge transport is one of the most important issues. In this paper, by means of the numerical renormalization group technique, we study the quantum phase transition and the charge transport for a parallel triple dot device in the strongly correlated limit, focusing on the effect of inter-dot hopping t beyond the Kondo regime. We find the quantum behaviors depend closely on the initial electron number on the dots, and the present model may map to single, double, and side-coupled impurity models in different parameter spaces. An orbital spin-1/2 Kondo effect between the conduction leads and the bonding orbital, and several magnetic-frustration phases are demonstrated when t is adjusted to different regimes. To understand these phenomena, a canonical transformation of the energy levels is given, and important physical quantities with respect to increasing t and necessary theoretical discussions are shown.

Keywords: semiconductor quantum dot device parallel triple dot structure quantum phase transition charge transport strongly correlated effect

Received: 07 June 2018
Revised: 03 July 2018
Accepted manuscript online:

PACS:	85.35.-p	(Nanoelectronic devices)
	73.63.-b	(Electronic transport in nanoscale materials and structures)
	71.27.+a	(Strongly correlated electron systems; heavy fermions)
	73.21.-b	(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11504102), the Scientific Research Items Foundation of Hubei Educational Committee (Grant Nos. Q20161803 and D20171803), the Doctoral Scientific Research Foundation of Hubei University of Automotive Technology (Grant No. BK201407).

Corresponding Authors: Yong-Chen Xiong
E-mail: xiongyc_lx@huat.edu.cn

Cite this article:

Yong-Chen Xiong(熊永臣), Zhan-Wu Zhu(朱占武), Ze-Dong He(贺泽东) Phase transition and charge transport through a triple dot device beyond the Kondo regime 2018 Chin. Phys. B 27 108503

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Phase transition and charge transport through a triple dot device beyond the Kondo regime

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