Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

doi:10.1088/1674-1056/26/4/045201

Abstract The damage on the atomic bonding and electronic state in a SiO_x(1.4-2.3 nm)/c-Si(150 μm) interface has been investigated. This occurred in the process of depositing indium tin oxide (ITO) film onto the silicon substrate by magnetron sputtering. We observe that this damage is caused by energetic particles produced in the plasma (atoms, ions, and UV light). The passivation quality and the variation on interface states of the SiO_x/c-Si system were mainly studied by using effective minority carrier lifetime (τ_eff) measurement as a potential evaluation. The results showed that the samples' τ_eff was reduced by more than 90% after ITO formation, declined from 107 μs to 5 μs. Following vacuum annealing at 200℃, the τ_eff can be restored to 30 μs. The components of Si to O bonding states at the SiO_x/c-Si interface were analyzed by x-ray photoelectron spectroscopy (XPS) coupled with depth profiling. The amorphous phase of the SiO_x layer and the “atomistic interleaving structure” at the SiO_x/c-Si interface was observed by a transmission electron microscope (TEM). The chemical configuration of the Si-O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds (or interface states) and effective minority carrier lifetime. After an appropriate annealing, the reduction of the Si dangling bonds between SiO_x and near the c-Si surface is helpful to improve the passivation effect.

Keywords: sputtered damage SiO_x/c-Si interface effective minority carrier lifetime XPS

Received: 22 November 2016
Revised: 18 January 2017
Accepted manuscript online:

PACS:	52.20.Hv	(Atomic, molecular, ion, and heavy-particle collisions)
	68.35.-p	(Solid surfaces and solid-solid interfaces: structure and energetics)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	73.20.-r	(Electron states at surfaces and interfaces)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61274067, 60876045, and 61674099) and the Research and Development Foundation of SHU-SOENs PV Joint Laboratory, China (Grant No. SS-E0700601).

Corresponding Authors: Zhong-Quan Ma
E-mail: zqma@shu.edu.cn

Cite this article:

Ming Gao(高明), Hui-Wei Du(杜汇伟), Jie Yang(杨洁), Lei Zhao(赵磊), Jing Xu(徐静), Zhong-Quan Ma(马忠权) Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO_x/Si system 2017 Chin. Phys. B 26 045201

[1]	Shewchun J, Dubow J, Wilmsen C W, Singh R, Burk D and Wager J F 1979 J. Appl. Phys. 50 2832
[2]	Gu J H, Si J L, Wang J X, Feng Y Y, Gao X Y and Lu J X 2015 Chin. Phys. B 24 117703
[3]	Ashok S, Sharma P P and Fonash S J 1980 IEEE T. Electron Dev. 21 725
[4]	Maruyama T and Fukui K 1991 J. Appl. Phys. 70 3848
[5]	Chiou B S, Hsieh S T and Wu W F 1994 Appl. Surf. Sci. 74 297
[6]	Demaurex B, Wolf S D, Descoeudres A, Holman Z C and Ballif C 2012 Appl. Phys. Lett. 101 171604
[7]	Rossnagel S M 1989 J. Vac. Sci. Technol. A 7 1025
[8]	Mattox D M 1989 J. Vac. Sci. Technol. A 7 1105
[9]	Tominaga K, Chong M and Shintani Y 1994 J. Vac. Sci. Technol. A 12 1435
[10]	Street R, Biegelsen D and Stuke J 1979 Philosophical Magazine Part B 40 451
[11]	Lu M J, Bowden S, Das U and Birkmire R 2007 Appl. Phys. Lett. 91 063507
[12]	Zhang D, Tavakoliyaraki A, Wu Y, Swaaija R A and Zemana M 2011 Energy Procedia 8 207
[13]	Meng X J, Ma Z Q, Li F, Shen C, Duan Y T, Zhao L, Li Y H and Xu F 2010 Chin. Phys. Lett. 27 076101
[14]	Li F, Ma Z Q, Meng X J, Lu P, Yu Z S and He B 2010 Chin. Sci. Bull. 55 1828
[15]	Seah M P and Spencer S J 2003 Surf. Interface Anal. 35 515
[16]	Liu E K, Zhu B S and Luo J S 2012 The Physics of Semiconductors (Xi'an: Xi'an Jiao Tong University Press) p. 222 (in Chinese)
[17]	Du H W, Shen L, Ding H, Yang J, Zhao L and Ma Z Q 2012 Chin. J. Mate. Rese. 26 461 (in Chinese)
[18]	Horfinyi S J, Pavelka T and Tutto P 1993 Appl. Surf. Sci. 63 306
[19]	De Wolf S, Olibet S and Ballif C 2008 Appl. Phys. Lett. 93 032101
[20]	De Wolf S, Ballif C and Kondo M 2012 Phys. Rev. B 85 113302
[21]	Du H W, Yang J, Li Y H, Xu F, Xu J and Ma Z Q 2015 Appl. Phys. Lett. 106 093508
[22]	Takagi Y, Sakashita Y, Toyoda H and Sugai H 2006 Vacuum 80 581
[23]	Luo Y R 2005 Data Book of Bond Energy (Beijing: Science Press) p. 279 (in Chinese)
[24]	Gruenbaum P E, King R R and Swanson R M 1989 J. Appl. Phys. 66 6110
[25]	Wang Y J 2010 "Study of the solutions to the STI oxide AA damage defects", Master Dissertation (Shanghai: Shanghai Jiao Tong University) pp. 21-22 (in Chinese)
[26]	Mitoma N, Aikawa S, Gao X, Kizu T, Shimizu M, Lin M F, Nabatame T and Tsukagoshi K 2014 Appl. Phys. Lett. 104 102103
[27]	Ow-Yang C W, Shigesato Y and Paine D C 2000 J. Appl. Phys. 88 3717
[28]	He J W, Xu X, Corneille J S and Goodman D W 1992 Surface Science 279 119
[29]	Kamohara S and Kamigaki Y 1991 J. Appl. Phys. 69 7871
[30]	Taguchi M, Yano A, Tohoda S, Matsuyama K, Nakamura Y, Nishiwaki T, Fujita K and Maruyama E 2014 IEEE J. Photovoltaic 4 96

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Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

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Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO_x/Si system