Measurement and analysis of the surface roughness of Ag film used in plasmonic lithography

doi:10.1088/1674-1056/26/1/016801

Abstract The silver (Ag)/photoresist (PR)/Ag structure, widely used in plasmonic photolithography, is fabricated on silicon substrate. The surface roughness of the top Ag film is measured and analyzed systematically. In particular, combined with template stripping technology, the lower side of the top Ag film is imaged by an atomic force microscope. The topographies show that the lower side surface is rougher than the initial surface of the subjacent PR film, which is mainly attributable to the deformation caused by particle collisions during the deposition of the Ag film. Additionally, further measurements show that the Ag film deposited on the PR exhibits a flatter upper side morphology than that directly deposited on the silicon substrate. This is explained by the different growth modes of Ag films on different substrates. This work will be beneficial to morphology analysis and performance evaluation for the films in optical and plasmonic devices.

Keywords: surface roughness lithography silver film deposition

Received: 03 August 2016
Revised: 30 September 2016
Accepted manuscript online:

PACS:	68.35.Ct	(Interface structure and roughness)
	81.16.Nd	(Micro- and nanolithography)
	68.55.-a	(Thin film structure and morphology)
	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2013CBA01702) and the National Natural Science Foundation of China (Grant No. 11275045).

Corresponding Authors: Qing Zhao
E-mail: zhaoq@uestc.edu.cn

Cite this article:

Gao-Feng Liang(梁高峰), Jiao Jiao(焦蛟), Xian-Gang Luo(罗先刚), Qing Zhao(赵青) Measurement and analysis of the surface roughness of Ag film used in plasmonic lithography 2017 Chin. Phys. B 26 016801

[1]	Barnes W L, Dereux A and Ebbesen T W 2003 Nature 424 824
[2]	Chen J, Smolyakov G A Brueck S R J and Malloy K J 2008 Opt. Express 16 14902
[3]	Liu Y J, Zheng Y B Liou J, Chiang I, Khoo I C and Huang T J 2011 J. Phys. Chem. C 115 7717
[4]	Zhang X P, Ma X M, Dou F, Zhao P X and Liu H M 2011 Adv. Funct. Mater. 21 4219
[5]	Liang G F, Wang C T, Zhao Z Y, Wang Y Q, Yao N, Gao P, Luo Y F, Gao G H, Zhao Q and Luo X G 2015 Adv. Opt Mater. 3 1248
[6]	Liang G F, Zhao Z Y, Yao N, Wang C T, Jiang B, Zhao Q and Luo X G 2014 J. Nanophotonics 8 083080
[7]	Liang G F, Zhao Q, Chen X, Wang C T, Zhao Z Y and Luo X G 2012 Acta Phys. Sin. 61 104203(in Chinese)
[8]	Ma X Z, Zhang R, Sun J B, Shi Y and Zhao Y 2015 Chin. Phys. Lett. 32 045202
[9]	Luo Z Y, Tang J, Ma B, Zhang Z Z, Jin Q Y and Wang J P 2012 Chin. Phys. Lett. 29 127501
[10]	Xu F Y, Chen G H, Wang C H, Cao B and Lou Y M 2013 Opt. Lett. 38 3819
[11]	Gao P, Yao N, Wang C T, Zhao Z Y, Luo Y F, Wang Y Q, Gao G H, Liu K P, Zhao C W and Luo X G 2015 Appl. Phys. Lett. 106 093110
[12]	Guo Z, Huang Q Z, Wang C T, Gao P, Zhang W, Zhao Z Y, Yan L S and Luo X G 2014 Plasmonics 9 103
[13]	Xue B Q, Chang H D, Sun B, Wang S K and Liu H G 2012 Chin. Phys. Lett. 29 046801
[14]	Zhou X, Luo Z J, Wang J H, Guo X and Ding Z 2015 Acta Phys. Sin. 64 216803(in Chinese)
[15]	Duan F L, Wang M and Liu J 2015 Acta Phys. Sin. 64 066801(in Chinese)
[16]	Vogel N, Zieleniecki J and Köper I 2012 Nanoscale 4 3820
[17]	Nagpal P, Lindquist N C, Oh S H and Norris D J 2009 Science 325 594
[18]	Wagner P, Hegner M, Guntherodt H J and Semenza G 1995 Langmuir 11 3867
[19]	Weiss E A, Kaufman G K, Kriebel J K, Li Z, Schalek R and Whitesides G M 2007 Langmuir 23 9686
[20]	Jiao J, Zhao Q, Li X, Liang G F, Huang X P and Luo X G 2014 Opt. Express 20 26277
[21]	Hecht B, Bielefeldt H, Novotny L, Inouye Y and Pohl D W 1996 Phys. Rev. Lett. 77 1889
[22]	Leong E S, Liu Y J, Wang B and Teng J 2011 ACS Appl. Mater. Inter. 3 1148
[23]	Higo M, Fujita K, Tanaka Y, Mitsushio M and Yoshidome T 2006 Appl. Surf. Sci. 252 5083
[24]	X31213, Zymet Inc., www. Zymet.com, E. Hanover, NJ 07936, USA
[25]	Venables J A 2000 Introduction to Surface and Thin Film Processes (Cambridge:Cambridge University Press) p. 145
[26]	Oura K, Lifshits V G, Saranin A A, Zotov A V and Katayama M 2003 Surface Science:An Introduction 1st edn. (Berlin:Springer) p. 357
[27]	McBrayer J D, Swanson R M and Sigmon T W 1986 J. Electrochem. Soc. 133 1242
[28]	Logeeswaran V J, Kobayashi N P, Islam M S, Wu W, Chaturvedi P, Fang N X, Wang S Y and Williams R S 2009 Nano Lett. 9 178
[29]	People R and Bean J C 1985 Appl. Phys. Lett. 47 322
[30]	Ke L, Lai S C, Liu H, Peh C K N, Wang B and Teng J H 2012 ACS Appl. Mater. Inter 4 1247
[31]	Chen W Q, Thoreson M D, Ishii S, Kildishev A V and Shalaev V M 2010 Opt. Express 18 5124

[1]	Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2023, 32(3): 037303.
[2]	Influence of magnetic field on power deposition in high magnetic field helicon experiment Yan Zhou(周岩), Peiyu Ji(季佩宇), Maoyang Li(李茂洋), Lanjian Zhuge(诸葛兰剑), and Xuemei Wu(吴雪梅). Chin. Phys. B, 2023, 32(2): 025205.
[3]	Growth behaviors and emission properties of Co-deposited MAPbI₃ ultrathin films on MoS₂ Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Chin. Phys. B, 2023, 32(1): 017901.
[4]	Optical and electrical properties of BaSnO₃ and In₂O₃ mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森). Chin. Phys. B, 2023, 32(1): 018101.
[5]	Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[6]	Monolayer MoS₂ of high mobility grown on SiO₂ substrate by two-step chemical vapor deposition Jia-Jun Ma(马佳俊), Kang Wu(吴康), Zhen-Yu Wang(王振宇), Rui-Song Ma(马瑞松), Li-Hong Bao(鲍丽宏), Qing Dai(戴庆), Jin-Dong Ren(任金东), and Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2022, 31(8): 088105.
[7]	Plasma-wave interaction in helicon plasmas near the lower hybrid frequency Yide Zhao(赵以德), Jinwei Bai(白进纬), Yong Cao(曹勇), Siyu Wu(吴思宇), Eduardo Ahedo, Mario Merino, and Bin Tian(田滨). Chin. Phys. B, 2022, 31(7): 075203.
[8]	Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition Ze Feng(冯泽), Yitong Wang(王一同), Jilong Hao(郝继龙), Meiyi Jing(井美艺), Feng Lu(卢峰), Weihua Wang(王维华), Yahui Cheng(程雅慧), Shengkai Wang(王盛凯), Hui Liu(刘晖), and Hong Dong(董红). Chin. Phys. B, 2022, 31(5): 057701.
[9]	The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). Chin. Phys. B, 2022, 31(4): 048503.
[10]	Effect of Cu doping on the secondary electron yield of carbon films on Ag-plated aluminum alloy Tiancun Hu(胡天存), Shukai Zhu(朱淑凯), Yanan Zhao(赵亚楠), Xuan Sun(孙璇), Jing Yang(杨晶), Yun He(何鋆), Xinbo Wang(王新波), Chunjiang Bai(白春江), He Bai(白鹤), Huan Wei(魏焕), Meng Cao(曹猛), Zhongqiang Hu(胡忠强), Ming Liu(刘明), and Wanzhao Cui(崔万照). Chin. Phys. B, 2022, 31(4): 047901.
[11]	Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Chin. Phys. B, 2022, 31(3): 038103.
[12]	Origin, characteristics, and suppression of residual nitrogen in MPCVD diamond growth reactor Yan Teng(滕妍), Dong-Yang Liu(刘东阳), Kun Tang(汤琨), Wei-Kang Zhao(赵伟康), Zi-Ang Chen(陈子昂), Ying-Meng Huang(黄颖蒙), Jing-Jing Duan(段晶晶), Yue Bian(卞岳), Jian-Dong Ye(叶建东), Shun-Ming Zhu(朱顺明), Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林). Chin. Phys. B, 2022, 31(12): 128106.
[13]	Significant suppression of residual nitrogen incorporation in diamond film with a novel susceptor geometry employed in MPCVD Weikang Zhao(赵伟康), Yan Teng(滕妍), Kun Tang(汤琨), Shunming Zhu(朱顺明), Kai Yang(杨凯), Jingjing Duan(段晶晶), Yingmeng Huang(黄颖蒙), Ziang Chen(陈子昂), Jiandong Ye(叶建东), and Shulin Gu(顾书林). Chin. Phys. B, 2022, 31(11): 118102.
[14]	Development of ZnTe film with high copper doping efficiency for solar cells Xin-Lu Lin(林新璐), Wen-Xiong Zhao(赵文雄), Qiu-Chen Wu(吴秋晨), Yu-Feng Zhang(张玉峰), Hasitha Mahabaduge, and Xiang-Xin Liu(刘向鑫). Chin. Phys. B, 2022, 31(10): 108802.
[15]	Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers Xiao-Bo He(何小波), Hua-Tian Hu(胡华天), Ji-Bo Tang(唐继博), Guo-Zhen Zhang(张国桢), Xue Chen(陈雪), Jun-Jun Shi(石俊俊), Zhen-Wei Ou(欧振伟), Zhi-Feng Shi(史志锋), Shun-Ping Zhang(张顺平), Chang Liu(刘昌), and Hong-Xing Xu(徐红星). Chin. Phys. B, 2022, 31(1): 017803.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Measurement and analysis of the surface roughness of Ag film used in plasmonic lithography

Cite this article:

Online attention