CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes |
Dakhlaoui H, Almansour S |
Department of Physics, College of Science for Girls, University of Dammam (UOD), Saudi Arabia |
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Abstract In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-AlxGa(1-x)N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current-voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, AlxGa(1-x)N width, and the aluminum concentration xAl. The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current--voltage (I-V) characteristic strongly depends on aluminum concentration xAl. It is shown that the peak-to-valley ratio (PVR) increases with xAl value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors.
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Received: 18 August 2015
Revised: 08 February 2016
Accepted manuscript online:
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PACS:
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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75.50.Pp
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(Magnetic semiconductors)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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Fund: Project supported by the Deanship of Scientific Research of University of Dammam (Grant No. 2014137). |
Corresponding Authors:
Dakhlaoui H
E-mail: h_dakhlaoui@yahoo.fr
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Cite this article:
Dakhlaoui H, Almansour S Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes 2016 Chin. Phys. B 25 067304
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