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Chin. Phys. B, 2016, Vol. 25(6): 067304    DOI: 10.1088/1674-1056/25/6/067304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

Dakhlaoui H, Almansour S
Department of Physics, College of Science for Girls, University of Dammam (UOD), Saudi Arabia
Abstract  

In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-AlxGa(1-x)N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current-voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, AlxGa(1-x)N width, and the aluminum concentration xAl. The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current--voltage (I-V) characteristic strongly depends on aluminum concentration xAl. It is shown that the peak-to-valley ratio (PVR) increases with xAl value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors.

Keywords:  nitride semiconductor      resonant tunneling diode      current density  
Received:  18 August 2015      Revised:  08 February 2016      Accepted manuscript online: 
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  75.50.Pp (Magnetic semiconductors)  
  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
Fund: 

Project supported by the Deanship of Scientific Research of University of Dammam (Grant No. 2014137).

Corresponding Authors:  Dakhlaoui H     E-mail:  h_dakhlaoui@yahoo.fr

Cite this article: 

Dakhlaoui H, Almansour S Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes 2016 Chin. Phys. B 25 067304

[1] Iizuka N, Kaneko K and Suzuki N 2002 Appl. Phys. Lett. 81 1803
[2] Lei Z F, Guo H X, Zeng C, Chen H, Wang Y S and Zhang Z G 2015 Chin. Phys. B 24 056103
[3] Mi M H, Zhang K, Zhao S L, Wang C, Zhang J C, Ma X H and Hao Y 2015 Chin. Phys. B 24 027303
[4] Zheng X F, Fan S, Chen Y H, Kang D, Zhang J K, Wang C, Mo J H, Li L, Ma X H, Zhang J C and Hao Y 2015 Chin. Phys. B 24 027302
[5] Zhao Y, Zhang J C, Xue J S, Zhou X W, Xu S R and Hao Y 2015 Chin. Phys. B 24 017302
[6] Bellotti E, Driscoll K, Moustakas T D and Paiella R 2009 J. Appl. Phys. 105 113103
[7] Remnev M A, Kateev I Y and Elesin V F 2010 Semiconductors 44 1034
[8] Zhang W, Zhang Y, Xue J S, Zhang Y, Ling L, Zhang J C and Hao Y 2011 Appl. Phys. Lett. 99 162105
[9] Suzuki N and Iizuka N 1997 Jpn. J. Appl. Phys. 36 L1006
[10] Iizuka N, Kaneko K and Suzuki N 2002 Appl. Phys. Lett. 81 1803
[11] Klein P, Mittereder J, Binari S, Roussos J, Katzer D and Storm D 2003 Electron. Lett. 39 1354
[12] Hsu J W P, Manfra M J, Molnar R J, Heying B and Speck J S 2002 Appl. Phys. Lett. 81 79
[13] Kikuchi A, Bannai R, Kishino K, Lee C M and Chyi J I 2002 Appl. Phys. Lett. 81 1729
[14] Foxon C T, Novikov S V, Belyaev A E, Zhao L X, Makarovsky O, Walker D J, Eaves L, Dykeman R I, Danylyuk S V, Vitusevich S A, Kappers M J, Barnard J S and Humphreys C J 2003 Phys. Stat. Sol. (c) 0 2389
[15] Golka S, Pflügl C, Schrenk W, Strasser G, Skierbiszewski C, Siekacz M, Grzegory I and Porowski S 2006 Appl. Phys. Lett. 88 172106
[16] Bayram C, Vashaei Z and Razeghi M 2010 Appl. Phys. Lett. 96 042103
[17] Nicolay S, Carlin J F, Feltin E, Butté R, Mosca M, Grandjean N, Ilegems M, Tchernycheva M, Nevou L and Julien F H 2005 Appl. Phys. Lett. 87 111106
[18] Belyaev A E, Foxon C T, Novikov S V, Makarovsky O, Eaves L, Kappers M J and Humphreys C J 2003 Appl. Phys. Lett. 83 3626
[19] Elias W, Salam S, Maria T and Francois H J 2012 J. Electron. Mater. 41 965
[20] Sakr S, Warde E, Tchernycheva M and Julien F H 2011 J. Appl. Phys. 109 023717
[21] Boucherit M Soltani A, Rousseau M, Farvacque J L and DeJaeger J C 2012 J. Appl. Phys. 112 114305
[22] Dakhlaoui H 2013 Chin. Phys. Lett. 30 077304
[23] Dakhlaoui H 2015 J. Appl. Phys. 117 135705
[24] Dakhlaoui H, Almansour S and Grafi E 2015 Superlatt. Microstruct. 77 196
[25] Dakhlaoui H 2014 Chin. Phys. B 23 097304
[26] Kuzmik J 2002 Semicond. Sci. Technol. 17 540
[27] Jain S C, Willander M, Narayan J and Overstraeten R V 2000 J. Appl. Phys. 87 965
[28] Lee T and Joshi R P 2002 IEEE Trans. Electron. Dev. 49 1511
[29] Egorkin V I, Zhuravlev M N and Kapaev V V 2011 Semiconductors 45 1638
[30] Datta S 2000 Proceedings of the International Electron Devices Meeting p. 70
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