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Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting |
| Yilin Wang(王义林)1, Li Huang(黄理)2, Liang Du(杜亮)3, Xi Dai(戴希)1 |
1. Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2. Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, China;
3. Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA |
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Abstract We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting Δ. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.
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Received: 04 November 2015
Revised: 18 December 2015
Accepted manuscript online:
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PACS:
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71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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71.28.+d
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(Narrow-band systems; intermediate-valence solids)
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71.10.Fd
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(Lattice fermion models (Hubbard model, etc.))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 2011CBA00108) and the National Basic Research Program of China (Grant No. 2013CB921700). |
Corresponding Authors:
Xi Dai
E-mail: daix@iphy.ac.cn
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Cite this article:
Yilin Wang(王义林), Li Huang(黄理), Liang Du(杜亮), Xi Dai(戴希) Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting 2016 Chin. Phys. B 25 037103
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