Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

doi:10.1088/1674-1056/25/12/124209

Abstract

The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width.

Keywords: SOI nanowire AWG crosstalk phase errors

Received: 22 April 2016
Revised: 30 July 2016
Accepted manuscript online:

PACS:	42.79.Sz	(Optical communication systems, multiplexers, and demultiplexers?)
	42.82.Bq	(Design and performance testing of integrated-optical systems)
	42.82.Et	(Waveguides, couplers, and arrays)

Fund:

Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016902), the National Natural Science Foundation of China (Grant Nos. 61274047, 61435013, 61307034, and 61405188), and the National Key Research and Development Program of China (Grant No. 2016YFB0402504).

Corresponding Authors: Jun-Ming An
E-mail: junming@semi.ac.cn

Cite this article:

Kai-Li Li(李凯丽), Jun-Ming An(安俊明), Jia-Shun Zhang(张家顺), Yue Wang(王玥), Liang-Liang Wang(王亮亮), Jian-Guang Li(李建光), Yuan-Da Wu(吴远大), Xiao-Jie Yin(尹小杰), Xiong-Wei Hu(胡雄伟) Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating 2016 Chin. Phys. B 25 124209

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