A novel physical parameter extraction approach for Schottky diodes

doi:10.1088/1674-1056/24/7/077305

Abstract Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode's electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.

Keywords: Schottky diode parameter extraction device modeling

Received: 30 October 2014
Revised: 29 January 2015
Accepted manuscript online:

PACS:	73.40.Sx	(Metal-semiconductor-metal structures)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant No. U1230112).

Corresponding Authors: Chen Xing
E-mail: xingc@live.cn

Cite this article:

Wang Hao (王昊), Chen Xing (陈星), Xu Guang-Hui (许光辉), Huang Ka-Ma (黄卡玛) A novel physical parameter extraction approach for Schottky diodes 2015 Chin. Phys. B 24 077305

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