Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

doi:10.1088/1674-1056/23/7/077304

Abstract A non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor (quasi-E-DHEMT) with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering (DIBL) was presented. Due to the metal organic chemical vapor deposition (MOCVD) grown 9-nm undoped AlGaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas (2DEG) was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1-μm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm. The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of -6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V.

Keywords: GaN-based HEMTs enhancement-mode high breakdown voltage

Received: 18 November 2013
Revised: 09 January 2014
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61334002) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

Corresponding Authors: Hao Yue
E-mail: yhao@xidian.edu.cn

About author: 73.40.Kp; 73.61.Ey

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Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage 2014 Chin. Phys. B 23 077304

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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

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