| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment |
| Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (gm) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (DT) and time constant (τT) of the N2O-treated device are smaller than those of a non-treated device. The results indicate that the N2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.
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Received: 26 May 2014
Revised: 14 August 2014
Accepted manuscript online:
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PACS:
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Ey
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(III-V semiconductors)
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72.30.+q
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(High-frequency effects; plasma effects)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61334002) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206). |
Corresponding Authors:
Hao Yue
E-mail: yhao@xidian.edu.cn
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Cite this article:
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment 2015 Chin. Phys. B 24 027303
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| [1] |
Kong X, Wei K, Liu G G and Liu X Y 2012 Chin. Phys. B 21 128501
|
| [2] |
Chu R M, Shen L K, Fichtenbaum N, Brown D, Chen Z, Keller S, Denbaars S P and Mishra U K 2008 IEEE Electron Dev. Lett. 29 974
|
| [3] |
Hu X, Koudymov A, Simin G, Yang J, Asifkhan M, Taraji A, Shur M S and Gaska R 2001 Appl. Phys. Lett. 79 2832
|
| [4] |
Tian B L, Chen C, Li Y R, Zhang W L and Liu X Z 2012 Chin. Phys. B 21 126102
|
| [5] |
Bi Z W, Hao Y, Feng Q, Gao Z Y, Zhang J C, Mao W, Zhang K, Ma X H, Liu H X, Yang L A, Mei N and Chang Y M 2012 Chin. Phys. Lett. 29 028501
|
| [6] |
Feng Q, Li Q, Xing T, Wang Q, Zhang J C and Hao Y 2012 Chin. Phys. B 21 067305
|
| [7] |
AsifKhan M, Hu X, Sumin G, Lunev A, Yang J, Gaska R and Shur M S 2000 IEEE Electron Dev. Lett. 21 63
|
| [8] |
Lee B H, Kim R H, Lim B O, Choi G W, Kim H J, Hong I P and Lee J H 2013 Electron. Lett. 49 1013
|
| [9] |
Chu R M, Sun S C, Wong M H, Fichtenbaum N, Brown D, Lee M C, Keller S, Wu F, James S S and Mishra U K 2007 IEEE Electron Dev. Lett. 28 781
|
| [10] |
Chu R M, Shen L K, Fichtenbaum N, Brown D, Keller S and Mishra U K 2008 IEEE Electron Dev. Lett. 29 297
|
| [11] |
Miller E J, Dang X Z, Wieder H H, Asbeck P M and Yu E T 2000 J. Appl. Phys. 87 8070
|
| [12] |
Hashizume T, Ootomo S and Hasegawa H 2003 Appl. Phys. Lett. 83 2952
|
| [13] |
Chiu H C, Yang C W, Chen C H and Wu C H 2012 Trans. Electron Dev. 59 3334
|
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